Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/ac11e4

	Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors
	Lin, Zheng-Zhao 1; Lu, Ling 1; Zheng, Xue-Feng 1; Cao, Yan-Rong 2; Hu, Pei-Pei 3; Fang, Xin 1; Ma, Xiao-Hua 1
刊名	CHINESE PHYSICS B
	2022-02-01
卷号	31 期号:3 页码:6
关键词	gallium nitride radiation effects defects pulse testing
ISSN号	1674-1056
DOI	10.1088/1674-1056/ac11e4
通讯作者	Lu, Ling(llv@xidian.edu.cn)
英文摘要	AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with heavy ions at various fluences. After irradiation by 2.1 GeV181 Ta32+ ions, the electrical characteristics of the devices significantly decreased. The threshold voltage shifted positively by approximately 25% and the saturation currents decreased by approximately 14%. Defects were induced in the band gap and the interface between the gate and barrier acted as tunneling sites, which increased the gate current tunneling probability. According to the pulsed output characteristics, the amount of current collapse significantly increased and more surface state traps were introduced after heavy ion irradiation. The time constants of the induced surface traps were mainly less than 10 mu s.
资助项目	National Natural Science Foundation of China[12035019] ; National Natural Science Foundation of China[11690042] ; Science Challenge Projects[TZ2018004]
WOS关键词	CURRENT COLLAPSE ; GAN ; HEMTS ; PERFORMANCE ; DEFECTS ; DC
WOS研究方向	Physics
语种	英语
出版者	IOP Publishing Ltd
WOS记录号	WOS:000760518000001
资助机构	National Natural Science Foundation of China ; Science Challenge Projects
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/142050]
专题	中国科学院近代物理研究所
通讯作者	Lu, Ling
作者单位	1.Xidian Univ, Sch Microelect, Xian 710071, Peoples R China 2.Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Lin, Zheng-Zhao,Lu, Ling,Zheng, Xue-Feng,et al. Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors[J]. CHINESE PHYSICS B,2022,31(3):6.
APA	Lin, Zheng-Zhao.,Lu, Ling.,Zheng, Xue-Feng.,Cao, Yan-Rong.,Hu, Pei-Pei.,...&Ma, Xiao-Hua.(2022).Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors.CHINESE PHYSICS B,31(3),6.
MLA	Lin, Zheng-Zhao,et al."Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors".CHINESE PHYSICS B 31.3(2022):6.