Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness

	Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness
	Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu
刊名	JOURNAL OF ELECTRONIC MATERIALS
	2020
卷号	49 期号:6 页码:3877-3882
公开日期	2020
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30403]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu. Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness[J]. JOURNAL OF ELECTRONIC MATERIALS,2020,49(6):3877-3882.
APA	Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu.(2020).Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness.JOURNAL OF ELECTRONIC MATERIALS,49(6),3877-3882.
MLA	Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu."Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness".JOURNAL OF ELECTRONIC MATERIALS 49.6(2020):3877-3882.