High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

	High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
	Fuyou Liao; Zhongxun Guo; Yin Wang; Yufeng Xie; Simeng Zhang; Yaochen Sheng; Hongwei Tang; Zihan Xu; Antoine Riaud; Peng Zhou; Jing Wan; Michael S. Fuhrer; Xiangwei Jiang; David Wei Zhang; Yang Chai; Wenzhong Bao
刊名	ACS APPLIED ELECTRONIC MATERIALS
	2020
卷号	2 期号:1 页码:111-119
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30714]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Fuyou Liao; Zhongxun Guo; Yin Wang; Yufeng Xie; Simeng Zhang; Yaochen Sheng; Hongwei Tang; Zihan Xu; Antoine Riaud; Peng Zhou; Jing Wan; Michael S. Fuhrer; Xiangwei Jiang; David Wei Zhang; Yang Chai; Wenzhong Bao. High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture[J]. ACS APPLIED ELECTRONIC MATERIALS,2020,2(1):111-119.
APA	Fuyou Liao; Zhongxun Guo; Yin Wang; Yufeng Xie; Simeng Zhang; Yaochen Sheng; Hongwei Tang; Zihan Xu; Antoine Riaud; Peng Zhou; Jing Wan; Michael S. Fuhrer; Xiangwei Jiang; David Wei Zhang; Yang Chai; Wenzhong Bao.(2020).High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture.ACS APPLIED ELECTRONIC MATERIALS,2(1),111-119.
MLA	Fuyou Liao; Zhongxun Guo; Yin Wang; Yufeng Xie; Simeng Zhang; Yaochen Sheng; Hongwei Tang; Zihan Xu; Antoine Riaud; Peng Zhou; Jing Wan; Michael S. Fuhrer; Xiangwei Jiang; David Wei Zhang; Yang Chai; Wenzhong Bao."High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture".ACS APPLIED ELECTRONIC MATERIALS 2.1(2020):111-119.