Effect of growth temperature of GaAs   Sb 1−  metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate

	Effect of growth temperature of GaAs Sb 1− metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate
	Jing Zhang; Hong-Liang Lv; Hai-Qiao Ni; Shi-Zheng Yang; Xiao-Ran Cui; Zhi-Chuan Niu; Yi-Men Zhang and Yu-Ming Zhang
刊名	Chinese Physics B
	2019
卷号	28 期号:11 页码:118102
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29474]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Jing Zhang;Hong-Liang Lv;Hai-Qiao Ni;Shi-Zheng Yang;Xiao-Ran Cui;Zhi-Chuan Niu;Yi-Men Zhang and Yu-Ming Zhang. Effect of growth temperature of GaAs Sb 1− metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate[J]. Chinese Physics B,2019,28(11):118102.
APA	Jing Zhang;Hong-Liang Lv;Hai-Qiao Ni;Shi-Zheng Yang;Xiao-Ran Cui;Zhi-Chuan Niu;Yi-Men Zhang and Yu-Ming Zhang.(2019).Effect of growth temperature of GaAs Sb 1− metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate.Chinese Physics B,28(11),118102.
MLA	Jing Zhang;Hong-Liang Lv;Hai-Qiao Ni;Shi-Zheng Yang;Xiao-Ran Cui;Zhi-Chuan Niu;Yi-Men Zhang and Yu-Ming Zhang."Effect of growth temperature of GaAs Sb 1− metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate".Chinese Physics B 28.11(2019):118102.