Control of electron tunnelling by fine band engineering of semiconductor potential barriers

	Control of electron tunnelling by fine band engineering of semiconductor potential barriers
	Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che
刊名	Nanoscale
	2019
卷号	11 期号:44 页码:21376-21385
语种	英语
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29464]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che. Control of electron tunnelling by fine band engineering of semiconductor potential barriers[J]. Nanoscale,2019,11(44):21376-21385.
APA	Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che.(2019).Control of electron tunnelling by fine band engineering of semiconductor potential barriers.Nanoscale,11(44),21376-21385.
MLA	Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che."Control of electron tunnelling by fine band engineering of semiconductor potential barriers".Nanoscale 11.44(2019):21376-21385.