Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy

	Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy
	Lianjun Wen; Dong Pan; Dunyuan Liao; Jianhua Zhao
刊名	Nanotechnology
	2019
卷号	31 期号:15 页码:1-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29491]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao. Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy[J]. Nanotechnology,2019,31(15):1-10.
APA	Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao.(2019).Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy.Nanotechnology,31(15),1-10.
MLA	Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao."Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy".Nanotechnology 31.15(2019):1-10.