Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

	Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array
	Wang, Qi; Zhou, Kehong; Zhao, Shuai; Yang, Wen; Zhang, Hongsheng; Yan, Wensheng; Huang, Yi; Yuan, Guodong
刊名	NANOMATERIALS
	2021
卷号	11 期号:12 页码:3179
公开日期	2021
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30771]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wang, Qi; Zhou, Kehong; Zhao, Shuai; Yang, Wen; Zhang, Hongsheng; Yan, Wensheng; Huang, Yi; Yuan, Guodong. Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array[J]. NANOMATERIALS,2021,11(12):3179.
APA	Wang, Qi; Zhou, Kehong; Zhao, Shuai; Yang, Wen; Zhang, Hongsheng; Yan, Wensheng; Huang, Yi; Yuan, Guodong.(2021).Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array.NANOMATERIALS,11(12),3179.
MLA	Wang, Qi; Zhou, Kehong; Zhao, Shuai; Yang, Wen; Zhang, Hongsheng; Yan, Wensheng; Huang, Yi; Yuan, Guodong."Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array".NANOMATERIALS 11.12(2021):3179.