Improving the signal resolution of semiconductor gas sensors to high-concentration gases

doi:10.1016/j.sse.2019.107648

	Improving the signal resolution of semiconductor gas sensors to high-concentration gases
	Zhou, Xinyuan 1,3; Yang, Liping 3; Bian, Yuzhi 1,3; Wang, Ying 3; Han, Ning 1,2,3; Chen, Yunfa 1,2,3
刊名	SOLID-STATE ELECTRONICS
	2019-12-01
卷号	162 页码:7
关键词	Metal oxide gas sensor Field-effect transistor High-concentration Signal resolution
ISSN号	0038-1101
DOI	10.1016/j.sse.2019.107648
英文摘要	Detecting high-concentration gases is challenging by metal oxide semiconductor (MOX) gas sensors, because the voltage signal would become saturated. In order to solve this problem, the zooming p + n field-effect transistors (FETs) circuit has been designed, combining an n-type enhancement-mode FET (EMFET) and a p-type depletion-mode FET (DMFET). This designed zooming p + n FETs can endow MOX gas sensors with the high signal resolution of similar to 3.0 V/decade to the 100-2000 ppm (part per million) acetone gas, triple that of MOX gas sensors without FETs (similar to 0.8 V/decade). Meanwhile, this zooming technology is also suitable for detecting other gases at high-concentration, such as 1%-20% LEL (lower explosion limit) methane. The principle of zooming p + n FETs is that with increasing the gas concentration, the suppressing role of the EMFET is firstly induced leading to a reduced signal resolution to the low-concentration target gas; then its suppressing effect becomes saturated and the DMFET starts to switch from ON state to OFF state in the high-concentration target gas, resulting in an amplifying effect herein and thus an enhanced signal resolution. This circuit is promising for the high-concentration gas detection as well as for the multi-functional gas detector design.
资助项目	National Key R&D Program of China[2016YFC0207100] ; National Natural Science Foundation of China[51602314] ; Guangdong Innovative and Entrepreneurial Research Team Program[2014ZT05C146]
WOS关键词	ACETONE ; EXPOSURE ; ETHANOL ; OXYGEN
WOS研究方向	Engineering ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000492851200005
资助机构	National Key R&D Program of China ; National Natural Science Foundation of China ; Guangdong Innovative and Entrepreneurial Research Team Program
内容类型	期刊论文
源URL	[http://ir.ipe.ac.cn/handle/122111/39103]
专题	中国科学院过程工程研究所
通讯作者	Han, Ning; Chen, Yunfa
作者单位	1.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, 19A Yuquan Rd, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Ctr Excellence Reg Atmospher Environm, Inst Urban Environm, Xiamen 361021, Fujian, Peoples R China 3.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Xinyuan,Yang, Liping,Bian, Yuzhi,et al. Improving the signal resolution of semiconductor gas sensors to high-concentration gases[J]. SOLID-STATE ELECTRONICS,2019,162:7.
APA	Zhou, Xinyuan,Yang, Liping,Bian, Yuzhi,Wang, Ying,Han, Ning,&Chen, Yunfa.(2019).Improving the signal resolution of semiconductor gas sensors to high-concentration gases.SOLID-STATE ELECTRONICS,162,7.
MLA	Zhou, Xinyuan,et al."Improving the signal resolution of semiconductor gas sensors to high-concentration gases".SOLID-STATE ELECTRONICS 162(2019):7.