Mechanisms of alpha particle induced soft errors in nanoscale static random access memories

doi:10.7498/aps.69.20201796

	Mechanisms of alpha particle induced soft errors in nanoscale static random access memories
	Zhang Zhan-Gang 3; Ye Bing 2; Ji Qing-Gang 2; Guo An-Long 2; Xi Kai 1; Lei Zhi-Feng 3; Huang Yun 3; Peng Chao 3; He Yu-Juan 3; Liu Jie 2
刊名	ACTA PHYSICA SINICA
	2020-07-05
卷号	69 期号:13 页码:9
关键词	alpha particle soft error single event upset accelerated test
ISSN号	1000-3290
DOI	10.7498/aps.69.20201796
通讯作者	Lei Zhi-Feng(leizhifeng@ceprei.com) ; Huang Yun(yunhuang@ceprei.com)
英文摘要	In this paper, the Am-241 is used as an alpha particle radioactive source to investigate the soft error mechanism in 65-nm and 90-nm static random accessmemory (SRAM). Combining reverse analysis, TRIM and CREME-MC Monte Carlo simulation, the energy transport process, deposited energy spectrum and cross-section characteristics of alpha particles in the device are revealed. The results show that the soft error sensitivity of the 65-nm device is much higher than that of the 90-nm device, and no flipping polarity is found. According to the real-time measured soft error rate at an altitude of 4300 m in Tibetan Yangbajing area, the thermal neutron sensitivity and alpha particle soft error rate, the overall soft error rate of 65-nm SRAM used at sea level of Beijing city is 429 FIT/Mb, and the contribution from alpha particles is 70.63%. Based on the results of reverse analysis, a three-dimensional simulation model of the device is constructed to study the influence of the incident angle of alpha particles on the single event upset characteristics. It is found that the corresponding deposition energy value at the peak of the number of particles in the sensitive region decreases by 40% with the incident angle increasing from 0 degrees to 60 degrees. While the single event upset cross sectionincreases by 79% due to the apparent single event upset edge effect in a sensitive region of the 65-nm device.
资助项目	National Natural Science Foundation of China[61704031] ; Science and Technology Research Project of Guangdong Province, China[2017B090901068] ; Science and Technology Research Project of Guangdong Province, China[2017B090921001] ; Science and Technology Plan Project of Guangzhou, China[201707010186]
WOS关键词	REVISION
WOS研究方向	Physics
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000560747900022
资助机构	National Natural Science Foundation of China ; Science and Technology Research Project of Guangdong Province, China ; Science and Technology Plan Project of Guangzhou, China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/140157]
专题	中国科学院近代物理研究所
通讯作者	Lei Zhi-Feng; Huang Yun
作者单位	1.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 2.Chinese Acad Sci, Mat Res Ctr, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Peoples R China
推荐引用方式 GB/T 7714	Zhang Zhan-Gang,Ye Bing,Ji Qing-Gang,et al. Mechanisms of alpha particle induced soft errors in nanoscale static random access memories[J]. ACTA PHYSICA SINICA,2020,69(13):9.
APA	Zhang Zhan-Gang.,Ye Bing.,Ji Qing-Gang.,Guo An-Long.,Xi Kai.,...&Du Guang-Hua.(2020).Mechanisms of alpha particle induced soft errors in nanoscale static random access memories.ACTA PHYSICA SINICA,69(13),9.
MLA	Zhang Zhan-Gang,et al."Mechanisms of alpha particle induced soft errors in nanoscale static random access memories".ACTA PHYSICA SINICA 69.13(2020):9.