The effect of cavities on recrystallization growth of high-fluence He implanted-SiC

doi:10.1016/j.nimb.2021.08.012

	The effect of cavities on recrystallization growth of high-fluence He implanted-SiC
	Zhang, Tongmin 4; He, Xiaoxun 1; Chen, Limin 1; Li, Jun 4; Liao, Qing 1; Xu, Shuai 1; Zheng, Pengfei 3; Li, Bingsheng 1,2
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2021-12-15
卷号	509 页码:68-72
关键词	He implantation Recrystallization Microstructure 6H-SiC
ISSN号	0168-583X
DOI	10.1016/j.nimb.2021.08.012
通讯作者	Li, Jun(lijun@impcas.ac.cn) ; Li, Bingsheng(libingshengmvp@163.com)
英文摘要	The effect of cavities on recrystallization growth of amorphous SiC induced by a high fluence He implantation was investigated. 300 keV He ions were used to implant the 6H-SiC (0001) wafer to a fluence of 4.4 x 1017/cm2 at room temperature. A buried amorphous layer with a width of approximately 468 nm was formed. Moreover, many spherical bubbles with diameters over 25 nm were observed by transmission electron microscopy. Recrystallization of the buried amorphous layer was visible after 900 degrees C annealing for 30 min. Some irregular cavities were found in the damaged layer. The recrystallization started from the amorphous/crystalline interface, and the formed cavities retarded the epitaxial growth. Nanocrystalline SiC was formed in the cavity layer. Extended defects were also characterized by transmission electron microscopy. The research results will give an insight into the recrystallization process in amorphous SiC.
资助项目	National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[12075194] ; Sichuan Science and Technology Program[2020ZYD055] ; National Key Research and Development Program of China[2017YFE0301306]
WOS关键词	AMORPHOUS-SILICON CARBIDE ; HELIUM ; AMORPHIZATION ; NUCLEATION ; RELAXATION ; SIMULATION ; DEFECT
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER
WOS记录号	WOS:000718136300002
资助机构	National Natural Science Foundation of China ; Sichuan Science and Technology Program ; National Key Research and Development Program of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/139991]
专题	中国科学院近代物理研究所
通讯作者	Li, Jun; Li, Bingsheng
作者单位	1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 2.Southwest Univ Sci & Technol, Minist Educ, Engn Res Ctr Biomass Mat, Mianyang 621010, Sichuan, Peoples R China 3.Southwestern Inst Phys, Chengdu 610041, Peoples R China 4.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Tongmin,He, Xiaoxun,Chen, Limin,et al. The effect of cavities on recrystallization growth of high-fluence He implanted-SiC[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2021,509:68-72.
APA	Zhang, Tongmin.,He, Xiaoxun.,Chen, Limin.,Li, Jun.,Liao, Qing.,...&Li, Bingsheng.(2021).The effect of cavities on recrystallization growth of high-fluence He implanted-SiC.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,509,68-72.
MLA	Zhang, Tongmin,et al."The effect of cavities on recrystallization growth of high-fluence He implanted-SiC".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 509(2021):68-72.