Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature

doi:10.3390/ma13245723

	Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature
	Wang, Tao 4; Yang, Zhen 1; Li, Bingsheng 5; Xu, Shuai 5; Liao, Qing 5; Ge, Fangfang 2; Zhang, Tongmin 3; Li, Jun 3
刊名	MATERIALS
	2020-12-01
卷号	13 期号:24 页码:13
关键词	6H-SiC H-2(+) implantation exfoliation microstructure
DOI	10.3390/ma13245723
通讯作者	Wang, Tao(wangtaoxtc@gmail.com) ; Yang, Zhen(yangzh97@mail.sysu.edu.cn) ; Li, Bingsheng(b.s.li@swust.edu.cn)
英文摘要	Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as "ion-cut" or "Smart-Cut". It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H-2(+) to a fluence of 5 x 10(16) H-2(+)/cm(2) at 450 and 900 degrees C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 degrees C and then annealed at 1100 degrees C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 degrees C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency "ion-cut" technology.
资助项目	National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[11905206] ; Sichuan Science and Technology Program[2020ZYD055] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx714101]
WOS关键词	SILICON-CARBIDE ; ON-INSULATOR ; HYDROGEN IMPLANTATION ; SURFACE EXFOLIATION ; BUBBLE FORMATION ; ION-CUT ; IRRADIATION ; HELIUM ; WAFERS ; H+
WOS研究方向	Materials Science
语种	英语
出版者	MDPI
WOS记录号	WOS:000603501700001
资助机构	National Natural Science Foundation of China ; Sichuan Science and Technology Program ; Doctor Research Foundation of Southwest University of Science and Technology
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/138510]
专题	中国科学院近代物理研究所
通讯作者	Wang, Tao; Yang, Zhen; Li, Bingsheng
作者单位	1.Sun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R China 2.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 4.China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Sichuan, Peoples R China 5.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China
推荐引用方式 GB/T 7714	Wang, Tao,Yang, Zhen,Li, Bingsheng,et al. Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature[J]. MATERIALS,2020,13(24):13.
APA	Wang, Tao.,Yang, Zhen.,Li, Bingsheng.,Xu, Shuai.,Liao, Qing.,...&Li, Jun.(2020).Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature.MATERIALS,13(24),13.
MLA	Wang, Tao,et al."Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature".MATERIALS 13.24(2020):13.