Magnetic and structural properties of Fe-implanted GaN at room temperature

doi:10.1016/j.vacuum.2020.109909

	Magnetic and structural properties of Fe-implanted GaN at room temperature
	Li, Bingsheng 2; Peng, Dingping 2; Li, Junhan 2; Kang, Long 3; Zhang, Tongmin 3; Zhang, Zhenxing 4; Jin, Shuoxue 5; Cao, Xingzhong 5; Liu, Jihong 1; Wu, Lu 6
刊名	VACUUM
	2021-02-01
卷号	184 页码:9
关键词	GaN-Based diluted magnetic semiconductor Fe implantation Ferromagnetism Raman spectroscopy Positron annihilation spectroscopy
ISSN号	0042-207X
DOI	10.1016/j.vacuum.2020.109909
通讯作者	Li, Bingsheng(libingshengmvp@163.com) ; Yang, Zhen(yangzh97@mail.sysu.edu.cn) ; Krsjak, Vladimir(vladimir.krsjak@stuba.sk)
英文摘要	GaN grown by metal-organic chemical vapour deposition on the sapphire substrate was implanted with 3 MeV Fe10+ ions to fluences of 1 x 10(13) to 5 x 10(15) ions/cm(2) at room temperature. The change of magnetic property with the implantation fluence was measured by vibrating sample magnetometer. The structural features, including implantation-induced interstitials and vacancies, were studied by a combination of Raman spectroscopy, photoluminescence spectroscopy, transmission electron microscopy and positron annihilation technology. The ferromagnetic behaviour was observed in the as-grown sample, and the saturation magnetization reached the maximum after the Fe implantation to a fluence of 5x 10(13) ions/cm(2). With increasing fluence, it decreased to be even smaller than that of the as-grown sample. The possible reasons are discussed.
资助项目	National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[12075194] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx714101]
WOS关键词	HIGH CURIE-TEMPERATURE ; ION-IMPLANTATION ; RAMAN-SCATTERING ; DEFECTS ; MG ; FERROMAGNETISM ; SEMICONDUCTORS ; POLARITY ; ALLOYS ; CR
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000604812800001
资助机构	National Natural Science Foundation of China ; Doctor Research Foundation of Southwest University of Science and Technology
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/138163]
专题	中国科学院近代物理研究所
通讯作者	Li, Bingsheng; Yang, Zhen; Krsjak, Vladimir
作者单位	1.CNNC Lanzhou Uranium Enrichment Co Ltd, Lanzhou, Peoples R China 2.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 4.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China 5.Chinese Acad Sci, Inst High Energy Phys, Multidisciplinary Res Div, Beijing 100049, Peoples R China 6.Nucl Power Inst China, Chengdu 610200, Sichuan, Peoples R China 7.Sun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Guangdong, Peoples R China 8.Slovak Univ Technol Bratislava, Inst Nucl & Phys Engn, Fac Elect Engn & Informat Technol, Ilkovicova 3, Bratislava 81219, Slovakia
推荐引用方式 GB/T 7714	Li, Bingsheng,Peng, Dingping,Li, Junhan,et al. Magnetic and structural properties of Fe-implanted GaN at room temperature[J]. VACUUM,2021,184:9.
APA	Li, Bingsheng.,Peng, Dingping.,Li, Junhan.,Kang, Long.,Zhang, Tongmin.,...&Krsjak, Vladimir.(2021).Magnetic and structural properties of Fe-implanted GaN at room temperature.VACUUM,184,9.
MLA	Li, Bingsheng,et al."Magnetic and structural properties of Fe-implanted GaN at room temperature".VACUUM 184(2021):9.