Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM*

doi:10.1088/1674-1056/abccb3

	Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM*
	Mo, Li-Hua 1,2; Ye, Bing 1,2; Liu, Jie 1,2; Luo, Jie 1,2; Sun, You-Mei 1,2; Cai, Chang 1,2; Li, Dong-Qing 1,2; Zhao, Pei-Xiong 1,2; He, Ze 1,2
刊名	CHINESE PHYSICS B
	2021-03-01
卷号	30 期号:3 页码:8
关键词	neutron three-dimension ICs single event upset multi-bit upset Geant4
ISSN号	1674-1056
DOI	10.1088/1674-1056/abccb3
通讯作者	Ye, Bing(yebing@impcas.ac.cn) ; Liu, Jie(j.liu@impcas.ac.cn)
英文摘要	Three-dimensional integrated circuits (3D ICs) have entered into the mainstream due to their high performance, high integration, and low power consumption. When used in atmospheric environments, 3D ICs are irradiated inevitably by neutrons. In this paper, a 3D die-stacked SRAM device is constructed based on a real planar SRAM device. Then, the single event upsets (SEUs) caused by neutrons with different energies are studied by the Monte Carlo method. The SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 MeV. The results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent, but the specific values are different. The SEU cross-section is shown to be dependent on the threshold of linear energy transfer (LETth) and thickness of the sensitive volume (T-sv). The secondary particle distribution and energy deposition are analyzed, and the internal mechanism that is responsible for this difference is illustrated. Besides, the ratio and patterns of multiple bit upset (MBU) caused by neutrons with different energies are also presented. This work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation.
资助项目	National Natural Science Foundation of China[12035019] ; National Natural Science Foundation of China[111690041] ; National Natural Science Foundation of China[11675233] ; Project of Science and Technology on Analog Integrated Circuit Laboratory, China[6142802WD201801]
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000630716800001
资助机构	National Natural Science Foundation of China ; Project of Science and Technology on Analog Integrated Circuit Laboratory, China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/137787]
专题	中国科学院近代物理研究所
通讯作者	Ye, Bing; Liu, Jie
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Mo, Li-Hua,Ye, Bing,Liu, Jie,et al. Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM*[J]. CHINESE PHYSICS B,2021,30(3):8.
APA	Mo, Li-Hua.,Ye, Bing.,Liu, Jie.,Luo, Jie.,Sun, You-Mei.,...&He, Ze.(2021).Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM*.CHINESE PHYSICS B,30(3),8.
MLA	Mo, Li-Hua,et al."Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM*".CHINESE PHYSICS B 30.3(2021):8.