A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods

	A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods
	Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Zhiyuan Dong; Hui Xie; Fenghua Wang ; Jun Yang
刊名	JOURNAL OF ELECTRONIC MATERIALS
	2020
卷号	49 期号:9 页码:5104-5109
语种	英语
公开日期	2020
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30579]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Zhiyuan Dong; Hui Xie; Fenghua Wang ; Jun Yang. A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods[J]. JOURNAL OF ELECTRONIC MATERIALS,2020,49(9):5104-5109.
APA	Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Zhiyuan Dong; Hui Xie; Fenghua Wang ; Jun Yang.(2020).A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods.JOURNAL OF ELECTRONIC MATERIALS,49(9),5104-5109.
MLA	Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Zhiyuan Dong; Hui Xie; Fenghua Wang ; Jun Yang."A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods".JOURNAL OF ELECTRONIC MATERIALS 49.9(2020):5104-5109.