Single-Dislocation Schottky Diodes

doi:10.1021/acs.nanolett.1c01081

CORC > 金属研究所 > 中国科学院金属研究所

	Single-Dislocation Schottky Diodes
	Tao, Ang 2,3; Yao, Tingting 2,3; Jiang, Yixiao 2,3; Yang, Lixin 2; Yan, Xuexi 2; Ohta, Hiromichi 4; Ikuhara, Yuichi 1,5,6; Chen, Chunlin 2,3; Ye, Hengqiang 3; Ma, Xiuliang 2,7
刊名	NANO LETTERS
	2021-07-14
卷号	21 期号:13 页码:5586-5592
关键词	dislocation Schottky diode conductive atomic force microscopy transmission electron microscopy first-principles calculations
ISSN号	1530-6984
DOI	10.1021/acs.nanolett.1c01081
通讯作者	Chen, Chunlin(clchen@imr.ac.cn) ; Ma, Xiuliang(xlma@imr.ac.cn)
英文摘要	Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped SrTiO3 substrates. Conductivity measurements using conductive atomic force microscopy indicate that a net current will flow through individual dislocation Schottky diodes under forward bias and disappear under reverse bias. Under cyclic bias voltages, the single-dislocation Schottky diodes exhibit a distinct resistive switching behavior containing low-resistance and high-resistance states with a high resistance ratio of similar to 10(3). A combined study of transmission electron microscopy and first-principles calculations reveals that the Fe2O3 dislocations comprise mixed Fe2+ and Fe3+ ions due to O deficiency and exhibit a one-dimensional electrical conductivity. The single-dislocation Schottky diodes may find applications for developing ultrahigh-density electronic and memory devices.
资助项目	National Natural Science Foundation of China[51771200] ; National Natural Science Foundation of China[51971224] ; National Natural Science Foundation of China[51801215] ; LiaoNing Revitalization Talents Program[XLYC1802088] ; Key Research Program of Frontier Sciences, CAS[QYZDY-SSW-JSC027] ; Ji Hua Laboratory Project[X210141TL210] ; MEXT[12024046] ; JSPS[19H05791] ; JSPS[JP17H06094] ; JSPS[17H01314]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000674354200019
资助机构	National Natural Science Foundation of China ; LiaoNing Revitalization Talents Program ; Key Research Program of Frontier Sciences, CAS ; Ji Hua Laboratory Project ; MEXT ; JSPS
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/159794]
专题	金属研究所_中国科学院金属研究所
通讯作者	Chen, Chunlin; Ma, Xiuliang
作者单位	1.Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan 2.Chinese Acad Sci, Univ Sci & Technol China, Sch Mat Sci & Engn, Inst Met Res,Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Ji Hua Lab, Foshan 528200, Peoples R China 4.Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010020, Japan 5.Tohoku Univ, Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan 6.Univ Tokyo, Inst Engn Innovat, Tokyo 1138656, Japan 7.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China
推荐引用方式 GB/T 7714	Tao, Ang,Yao, Tingting,Jiang, Yixiao,et al. Single-Dislocation Schottky Diodes[J]. NANO LETTERS,2021,21(13):5586-5592.
APA	Tao, Ang.,Yao, Tingting.,Jiang, Yixiao.,Yang, Lixin.,Yan, Xuexi.,...&Ma, Xiuliang.(2021).Single-Dislocation Schottky Diodes.NANO LETTERS,21(13),5586-5592.
MLA	Tao, Ang,et al."Single-Dislocation Schottky Diodes".NANO LETTERS 21.13(2021):5586-5592.