Epitaxial growth of < 010 >-oriented MoO2 nanorods on m-sapphire

doi:10.1016/j.cap.2020.07.015

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Epitaxial growth of < 010 >-oriented MoO2 nanorods on m-sapphire
	Liu, JX ; Shi, J ; Wu, D ; Zheng, XM ; Chen, FM ; Xiao, JT ; Li, YZ ; Song, F ; Gao, YL ; Huang, H
刊名	CURRENT APPLIED PHYSICS
	2020
卷号	20 期号:10 页码:1130-1135
关键词	FIELD-EMISSION PROPERTIES ELECTRONIC-STRUCTURE BISMUTH DRIVEN
ISSN号	1567-1739
DOI	10.1016/j.cap.2020.07.015
文献子类	期刊论文
英文摘要	Molybdenum dioxide (MoO2) materials have attracted considerable interests due to their superduper properties and potential applications, relating to the growth directions and exposed surfaces. Here, we reported as the substrate changes from c-to m-sapphire, the growth direction of epitaxial MoO2 nanorods via an atmospheric pressure chemical vapor deposition approach changes along from <001> to <010> of bulk monoclinic MoO2 accompanied by exposing different surfaces. Optical microscopy (OM), Raman spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), cross-sectional scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) measurements reveal these MoO2 nanorods are epitaxially grown on m-sapphire substrates with the orientation of MoO2 (101)//sapphire (10 (1) over bar0) and MoO2 <010> in line with sapphire <0001>. The electrical conductivity significantly depends on the crystallographic direction of MoO2 nanorods. The method to control the growth directions of 1D MoO2 nanorods has potential applications in nanoelectronic devices.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/32861]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA 2.Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, 239 Zhangheng Rd, Shanghai 201204, Peoples R China 4.Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, 932 South Lushan Rd, Changsha 410083, Hunan, Peoples R China 5.Cent South Univ, Powder Met Res Inst, Changsha 410083, Peoples R China
推荐引用方式 GB/T 7714	Liu, JX,Shi, J,Wu, D,et al. Epitaxial growth of < 010 >-oriented MoO2 nanorods on m-sapphire[J]. CURRENT APPLIED PHYSICS,2020,20(10):1130-1135.
APA	Liu, JX.,Shi, J.,Wu, D.,Zheng, XM.,Chen, FM.,...&Huang, H.(2020).Epitaxial growth of < 010 >-oriented MoO2 nanorods on m-sapphire.CURRENT APPLIED PHYSICS,20(10),1130-1135.
MLA	Liu, JX,et al."Epitaxial growth of < 010 >-oriented MoO2 nanorods on m-sapphire".CURRENT APPLIED PHYSICS 20.10(2020):1130-1135.