Complete Strain Mapping of Nanosheets of Tantalum Disulfide

doi:10.1021/acsami.0c06517

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Complete Strain Mapping of Nanosheets of Tantalum Disulfide
	Cao, Y ; Assefa, T ; Banerjee, S ; Wieteska, A ; Wang, DZR ; Pasupathy, A ; Tong, X ; Liu, Y ; Lu, WJ ; Sun, YP
刊名	ACS APPLIED MATERIALS & INTERFACES
	2020
卷号	12 期号:38 页码:43173-43179
关键词	MONOLAYER MICROSCOPY
ISSN号	1944-8244
DOI	10.1021/acsami.0c06517
文献子类	期刊论文
英文摘要	Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device and calls for high resolution but spatially resolved rapid characterization methods. Here, we show that using fly-scan nano X-ray diffraction, we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 mu m on quasi-2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a similar to 100 nm thick sheet of 1T-TaS2 by scanning a 12 keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron- and submicron-sized "bubbles" that are present in the sample may be reconstructed from these images. The experiments use state-of-the-art synchrotron instrumentation and will allow rapid and nonintrusive strain mapping of thin-film samples and electronic devices based on quasi-2D materials.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/32753]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA 2.Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA 3.Brookhaven Natl Lab, Ctr Funct Nanomat CFN, Upton, NY 11973 USA 4.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 5.Chinese Acad Sci, High Magnet Lab, Hefei 230031, Peoples R China 6.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil SSRF, Shanghai 201800, Peoples R China 8.Brookhaven Natl Lab, Natl Synchrotron Light Source 2, Upton, NY 11973 USA 9.Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA
推荐引用方式 GB/T 7714	Cao, Y,Assefa, T,Banerjee, S,et al. Complete Strain Mapping of Nanosheets of Tantalum Disulfide[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(38):43173-43179.
APA	Cao, Y.,Assefa, T.,Banerjee, S.,Wieteska, A.,Wang, DZR.,...&Robinson, IK.(2020).Complete Strain Mapping of Nanosheets of Tantalum Disulfide.ACS APPLIED MATERIALS & INTERFACES,12(38),43173-43179.
MLA	Cao, Y,et al."Complete Strain Mapping of Nanosheets of Tantalum Disulfide".ACS APPLIED MATERIALS & INTERFACES 12.38(2020):43173-43179.