High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy

	High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy
	Su Shao-Jian ; Zhang Dong-Liang ; Zhang Guang-Ze ; Xue Chun-Lai ; Cheng Bu-Wen ; Wang Qi-Ming
刊名	acta physica sinica
	2013
卷号	62 期号:5 页码:058101
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-10-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24426]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Su Shao-Jian,Zhang Dong-Liang,Zhang Guang-Ze,et al. High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy[J]. acta physica sinica,2013,62(5):058101.
APA	Su Shao-Jian,Zhang Dong-Liang,Zhang Guang-Ze,Xue Chun-Lai,Cheng Bu-Wen,&Wang Qi-Ming.(2013).High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy.acta physica sinica,62(5),058101.
MLA	Su Shao-Jian,et al."High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy".acta physica sinica 62.5(2013):058101.