Magnetic properties of the layered magnetic topological insulator EuSn2As2
Li, Huijie1,2; Gao, Wenshuai1; Chen, Zheng2,3; Chu, Weiwei2,3; Nie, Yong2,3; Ma, Shuaiqi1; Han, Yuyan2; Wu, Min2; Li, Tian2; Niu, Qun2
刊名PHYSICAL REVIEW B
2021-08-25
卷号104
ISSN号2469-9950
DOI10.1103/PhysRevB.104.054435
通讯作者Gao, Wenshuai(gwsh@ahu.edu.cn)
英文摘要EuSn2As2 with a layered rhombohedral crystal structure is proposed to be a candidate for an intrinsic antiferromagnetic (AFM) topological insulator. Here, we have investigated systematic magnetoresistance (MR) and magnetization measurements on the high-quality EuSn2As2 single crystal with the magnetic field both parallel and perpendicular to the (001) plane. Both the kink of magnetic susceptibility and longitudinal resistivity reveal that EuSn2As2 undergoes an AFM transition at T-N = 21 K. At T = 2 K, the magnetization exhibits two successive plateaus of similar to 5.6 and similar to 6.6 mu(B)/Eu at the corresponding critical magnetic fields. Combined with the negative longitudinal MR and abnormal Hall resistance, we demonstrate that EuSn2As2 undergoes complicated magnetic transitions from an AFM state to a canted ferromagnetic (FM) state at H-c and then to a polarized FM state at H-s as the magnetic field increases.
资助项目National Key Research and Development Program of China[2016YFA0401003] ; National Key Research and Development Program of China[2017YFA0403502] ; Natural Science Foundation of China[U19A2093] ; Natural Science Foundation of China[U2032214] ; Natural Science Foundation of China[U2032163] ; Natural Science Foundation of China[U1732274] ; Natural Science Foundation of China[11904002] ; Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences (CAS)[2019HSC-CIP 001] ; Youth Innovation Promotion Association of CAS[2017483] ; Natural Science Foundation of Anhui Province[1908085QA15]
WOS研究方向Materials Science ; Physics
语种英语
出版者AMER PHYSICAL SOC
WOS记录号WOS:000688522400007
资助机构National Key Research and Development Program of China ; Natural Science Foundation of China ; Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences (CAS) ; Youth Innovation Promotion Association of CAS ; Natural Science Foundation of Anhui Province
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/124441]  
专题中国科学院合肥物质科学研究院
通讯作者Gao, Wenshuai
作者单位1.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
2.Chinese Acad Sci, HFIPS, High Field Magnet Lab, Anhui Key Lab Condensed Matter Phys Extreme Condi, Hefei 230031, Anhui, Peoples R China
3.Univ Sci & Technol China, Dept Phys, Hefei 230031, Anhui, Peoples R China
4.Anhui Univ, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
推荐引用方式
GB/T 7714
Li, Huijie,Gao, Wenshuai,Chen, Zheng,et al. Magnetic properties of the layered magnetic topological insulator EuSn2As2[J]. PHYSICAL REVIEW B,2021,104.
APA Li, Huijie.,Gao, Wenshuai.,Chen, Zheng.,Chu, Weiwei.,Nie, Yong.,...&Tian, Mingliang.(2021).Magnetic properties of the layered magnetic topological insulator EuSn2As2.PHYSICAL REVIEW B,104.
MLA Li, Huijie,et al."Magnetic properties of the layered magnetic topological insulator EuSn2As2".PHYSICAL REVIEW B 104(2021).
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