y Possible Topological Hall Effect above Room Temperature in Layered Cr1.2Te2 Ferromagnet
Huang, Meng2; Gao, Lei3; Zhang, Ying2; Lei, Xunyong2; Hu, Guojing2; Xiang, Junxiang2; Zeng, Hualing2; Fu, Xuewen4; Zhang, Zengming5; Chai, Guozhi3
刊名NANO LETTERS
2021-05-26
卷号21
关键词topological Hall effect spin chirality room-temperature ferromagnet layered structure spintronics
ISSN号1530-6984
DOI10.1021/acs.nanolett.1c00493
通讯作者Xiang, Bin(binxiang@ustc.edu.cn)
英文摘要Topological Hall effect (THE) has been used as a powerful tool to unlock spin chirality in novel magnetic materials. Recent focus has been widely paid to THE and possible chiral spin textures in two-dimensional (2D) layered magnetic materials. However, the room-temperature THE has been barely reported in 2D materials, which hinders its practical applications in 2D spintronics. In this paper, we report a possible THE signal featuring antisymmetric peaks in a wide temperature window up to 320 K in Cr1.2Te2, a new quasi-2D ferromagnetic material. The temperature, thickness, and magnetic field dependences of the THE lead to potential spin chirality origin that is associated with the spin canting under external magnetic fields. Our work holds promise for practical applications in future chiral spin-based vdW spintronic devices.
资助项目National Key Research and Development Program of China[2017YFA0402902] ; U.S. Department of Energy, Office of Science, Basic Energy Sciences[DE-SC0020221] ; Fundamental Research Funds for the Central Universities[WK2030020032] ; Fundamental Research Funds for the Central Universities[WK3510000013] ; Anhui Initiative in Quantum Information Technologies[AHY170000] ; U.S. NSF[DMR-2005108]
WOS关键词MAGNETIC-PROPERTIES ; SKYRMION LATTICE ; CR2TE3 ; CR3TE4 ; PHASE
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000657242300019
资助机构National Key Research and Development Program of China ; U.S. Department of Energy, Office of Science, Basic Energy Sciences ; Fundamental Research Funds for the Central Universities ; Anhui Initiative in Quantum Information Technologies ; U.S. NSF
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/123650]  
专题中国科学院合肥物质科学研究院
通讯作者Xiang, Bin
作者单位1.Univ New Hampshire, Mat Sci Program, Durham, NH 03824 USA
2.Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei Natl Lab Phys Sci Microscale, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China
3.Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China
4.Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China
5.Univ Sci & Technol China, Ctr Phys Expt, Hefei 230026, Anhui, Peoples R China
6.Univ Sci & Technol China, Anhui Lab Adv Photon Sci & Technol, Hefei 230026, Anhui, Peoples R China
7.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China
8.Georgetown Univ, Phys Dept, Washington, DC 20057 USA
9.Univ New Hampshire, Dept Phys, Durham, NH 03824 USA
推荐引用方式
GB/T 7714
Huang, Meng,Gao, Lei,Zhang, Ying,et al. y Possible Topological Hall Effect above Room Temperature in Layered Cr1.2Te2 Ferromagnet[J]. NANO LETTERS,2021,21.
APA Huang, Meng.,Gao, Lei.,Zhang, Ying.,Lei, Xunyong.,Hu, Guojing.,...&Xiang, Bin.(2021).y Possible Topological Hall Effect above Room Temperature in Layered Cr1.2Te2 Ferromagnet.NANO LETTERS,21.
MLA Huang, Meng,et al."y Possible Topological Hall Effect above Room Temperature in Layered Cr1.2Te2 Ferromagnet".NANO LETTERS 21(2021).
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