Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor | |
Liu, MH (Liu, Mohan)[ 1,2 ]; Lu, W (Lu, Wu)[ 1 ]; Yu, X (Yu, Xin)[ 1,2 ]; Wang, X (Wang, Xin)[ 1 ]; Li, XL (Li, Xiaolong)[ 1 ]; Yao, S (Yao, Shuai)[ 1,2 ]; Guo, Q (Guo, Qi)[ 1 ] | |
刊名 | ELECTRONICS |
2019 | |
卷号 | 8期号:6页码:1-8 |
关键词 | saturation effect gain degradation total ionizing dose gamma ray bipolar transistor |
ISSN号 | 2079-9292 |
DOI | 10.3390/electronics8060657 |
英文摘要 | The latent enhanced low dose rate sensitivity (ELDRS) effect is observed in the double-polysilicon self-aligned (DPSA) technology PNP bipolar junction transistor (BJT) irradiated with a high and low dose rate gamma ray, which is discussed from the perspective of the three-stage degradation rate of the excess base current. The great degradation rate as a result of the high dose irradiation of the first stage is dominantly ascribed to the positive oxide trap charges accumulated during a short irradiation, and then due to the competition between the recombination of electrons and capture of the hole by the traps. It declined sharply into a degradation rate saturated region of the second stage. However, for the low dose rate, the small increase in the degradation rate in the first stage is caused by the holes escaping from the initial recombination and being transported to the interface to form the interface states. Then, the competition between the steadily increasing interfacial trap charge and the continuously annealed shallow level oxide trap charge leads to the stable increase of degradation under low dose irradiation. Finally, in stage three, the increases of the degradation rates for high and low dose irradiation result from the different amounts of the hydrogen molecules generated by the hole reactive with depassiviated Si suspended bonds, which can interact with the deep level defects and release protons, causing an increase of interfacial trap charges with prolonged irradiation. |
内容类型 | 期刊论文 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/7274] |
专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 |
作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, MH ,Lu, W ,Yu, X ,et al. Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor[J]. ELECTRONICS,2019,8(6):1-8. |
APA | Liu, MH .,Lu, W .,Yu, X .,Wang, X .,Li, XL .,...&Guo, Q .(2019).Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor.ELECTRONICS,8(6),1-8. |
MLA | Liu, MH ,et al."Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor".ELECTRONICS 8.6(2019):1-8. |
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