Comparison and mechanism of electromigration reliability between Cu wire and Au wire bonding in molding state

doi:10.1007/s10854-019-02840-6

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	Comparison and mechanism of electromigration reliability between Cu wire and Au wire bonding in molding state
	Du, Yahong; Gao, Li-Yin; Yu, Daquan; Liu, Zhi-Quan
刊名	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
	2020-02-01
卷号	31 期号:4 页码:2967-2975
DOI	10.1007/s10854-019-02840-6
英文摘要	Electromigration (EM) reliability and failure analysis of Cu wire and Au wire bonding processes on Al substrates after molding were investigated and compared systematically. According to the resistance as a function of EM time trend, there were four stages during the EM test for wire bonding that can tentatively be referred to as the fluctuating resistance stage, stable resistance stage, rapidly increasing resistance stage and quick failure stage of the sample. When the applied current was 1.8 A on a wire with a diameter of 20 mu m (at a current density of 5.7 x 10(5) A/cm(2)), the lifetimes of the Cu wire and Au wire bonding processes were 1032 h and 119 h, respectively, according to Weibull analyses. Two kinds of failure modes were observed: wire fracture and first bond fracture. Almost 90% of the failed samples belonged to wire fracture category. After the EM test, the thickness of intermetallic compounds (IMCs) at the anode interface was similar to that at the cathode interface for both the Cu wire and Au wire bonding cases, which means that the normal polarity effect during electromigration did not occur here. However, the thickness of the IMCs at the Au/Al bonding interface was thicker than that at the Cu/Al interface for both the aged and EM samples. Voids and cracks were observed within the Au wire-bonding interface. It is suspected that the Cu wire bonding process had a slower thermal diffusion and smaller EM flux than those of the Au wire bonding process. Due to a decrease in vacancy flux within the Cu wire bonding region, the cracks were also suppressed, which greatly extended the lifetime of the Cu wire bonds.
WOS记录号	WOS:000514597300023
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/155720]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Du, Yahong,Gao, Li-Yin,Yu, Daquan,et al. Comparison and mechanism of electromigration reliability between Cu wire and Au wire bonding in molding state[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2020,31(4):2967-2975.
APA	Du, Yahong,Gao, Li-Yin,Yu, Daquan,&Liu, Zhi-Quan.(2020).Comparison and mechanism of electromigration reliability between Cu wire and Au wire bonding in molding state.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,31(4),2967-2975.
MLA	Du, Yahong,et al."Comparison and mechanism of electromigration reliability between Cu wire and Au wire bonding in molding state".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 31.4(2020):2967-2975.