Metal–insulator transition in few-layered GaTe transistors

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	Metal–insulator transition in few-layered GaTe transistors
	Xiuxin Xia 1; Xiaoxi Li 1; Hanwen Wang 1
刊名	半导体学报:英文版
	2020
卷号	41.0 期号:007 页码:28-32
关键词	metal-insulator transition gate tunable GaTe field effect transistors
ISSN号	1674-4926
英文摘要	Two-dimensional(2D)materials have triggered enormous interest thanks to their interesting properties and potential applications,ranging from nanoelectronics to energy catalysis and biomedicals.In addition to other widely investigated 2D materials,GaTe,a layered material with a direct band gap of~1.7 e V,is of importance for applications such as optoelectronics.However,detailed information on the transport properties of GaTe is yet to be explored,especially at low temperatures.Here,we report on electrical transport measurements on few-layered GaTe field effect transistors(FETs)encapsulated by h-BN at different temperatures.We find that by tuning the carrier density,ambipolar transport was realized in GaTe devices,and an electrical-field-induced metal to insulator transition(MIT)was observed when it was hole doped.The mobilities of GaTe devices show a clear dependence on temperature and increase with the decrease of temperature,reaching~1200 cm2 V-1s-1 at 3 K.Our findings may inspire further electronic studies in devices based on GaTe.
语种	中文
CSCD记录号	CSCD:6756707
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/151645]
专题	金属研究所_中国科学院金属研究所
作者单位	1.中国科学院金属研究所 2.School of Material Science and Engineering,University of Science and Technology of China
推荐引用方式 GB/T 7714	Xiuxin Xia,Xiaoxi Li,Hanwen Wang. Metal–insulator transition in few-layered GaTe transistors[J]. 半导体学报:英文版,2020,41.0(007):28-32.
APA	Xiuxin Xia,Xiaoxi Li,&Hanwen Wang.(2020).Metal–insulator transition in few-layered GaTe transistors.半导体学报:英文版,41.0(007),28-32.
MLA	Xiuxin Xia,et al."Metal–insulator transition in few-layered GaTe transistors".半导体学报:英文版 41.0.007(2020):28-32.