Chemical vapor deposition of layered two-dimensional MoSi2N4 materials

doi:10.1126/science.abb7023

CORC > 金属研究所 > 中国科学院金属研究所

	Chemical vapor deposition of layered two-dimensional MoSi2N4 materials
	Hong, Yi-Lun 2,3; Liu, Zhibo 2; Wang, Lei 2,3; Zhou, Tianya 2,3; Ma, Wei 2,3; Xu, Chuan 2; Feng, Shun 2,5; Chen, Long 2; Chen, Mao-Lin 2,3; Sun, Dong-Ming 2,3
刊名	SCIENCE
	2020-08-07
卷号	369 期号:6504 页码:670-+
ISSN号	0036-8075
DOI	10.1126/science.abb7023
通讯作者	Ren, Wencai(wcren@limr.ac.cn)
英文摘要	Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4. This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap similar to 1.94 electron volts), high strength (similar to 66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals.
资助项目	National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51725103] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51671193] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; National Key R&D Program of the Ministry of Science and Technology of China[2016YFA0200101] ; LiaoNing Revitalization Talents Program[XLYC1808013] ; Program for Guangdong Introducing Innovative and Entrepreneurial Teams ; Development and Reform Commission of Shenzhen Municipality
WOS研究方向	Science & Technology - Other Topics
语种	英语
出版者	AMER ASSOC ADVANCEMENT SCIENCE
WOS记录号	WOS:000559184400041
资助机构	National Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Key R&D Program of the Ministry of Science and Technology of China ; LiaoNing Revitalization Talents Program ; Program for Guangdong Introducing Innovative and Entrepreneurial Teams ; Development and Reform Commission of Shenzhen Municipality
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/140174]
专题	金属研究所_中国科学院金属研究所
通讯作者	Ren, Wencai
作者单位	1.Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 4.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
推荐引用方式 GB/T 7714	Hong, Yi-Lun,Liu, Zhibo,Wang, Lei,et al. Chemical vapor deposition of layered two-dimensional MoSi2N4 materials[J]. SCIENCE,2020,369(6504):670-+.
APA	Hong, Yi-Lun.,Liu, Zhibo.,Wang, Lei.,Zhou, Tianya.,Ma, Wei.,...&Ren, Wencai.(2020).Chemical vapor deposition of layered two-dimensional MoSi2N4 materials.SCIENCE,369(6504),670-+.
MLA	Hong, Yi-Lun,et al."Chemical vapor deposition of layered two-dimensional MoSi2N4 materials".SCIENCE 369.6504(2020):670-+.