The importance of H-2 in the controlled growth of semiconducting single-wall carbon nanotubes

doi:10.1016/j.jmst.2020.02.067

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	The importance of H-2 in the controlled growth of semiconducting single-wall carbon nanotubes
	Zhang, Feng 2,3; Sun, Jia 4; Zheng, Yonggang 4; Hou, Peng-Xiang 2,3; Liu, Chang 2,3; Cheng, Min 2,3; Li, Xin 2,3; Cheng, Hui-Ming 2,5; Chen, Zhen 1,4
刊名	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
	2020-10-01
卷号	54 页码:105-111
关键词	Single-wall carbon nanotubes Controlled growth Semiconducting Growth mode H-2
ISSN号	1005-0302
DOI	10.1016/j.jmst.2020.02.067
通讯作者	Hou, Peng-Xiang(pxhou@imr.ac.cn) ; Liu, Chang(cliu@imr.ac.cn)
英文摘要	H-2 is considered an indispensable component of the atmosphere for the growth of high-quality single-wall carbon nanotubes (SWCNTs) by chemical vapor deposition. However, details of the roles H-2 playing are still unclear due to the complex conditions of SWCNT growth. In this study, we elucidate the functions of H-2 in the selective growth of semiconducting SWCNTs (s-SWCNTs) by using monodispersed uniform Fe nanoparticles as a catalyst. High-quality s-SWCNTs were synthesized by finely tuning the concentration of H-2 and the other growth parameters. Experimental data combined with atomistic simulations indicate that H-2 not only adjusts the concentration of the carbon source, but also serves as a mild etchant that selectively removes small carbon caps grown by a perpendicular mode from the Fe nanoparticles. These results provide useful hints for the controlled growth of SWCNTs with a semiconducting or metallic conductivity, and even a specific chirality. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
资助项目	Ministry of Science and Technology of China[2016YFA0200101] ; National Natural Science Foundation of China[51702325] ; National Natural Science Foundation of China[51625203] ; National Natural Science Foundation of China[51532008] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51572264] ; National Natural Science Foundation of China[5171101360]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	JOURNAL MATER SCI TECHNOL
WOS记录号	WOS:000545310500011
资助机构	Ministry of Science and Technology of China ; National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/139805]
专题	金属研究所_中国科学院金属研究所
通讯作者	Hou, Peng-Xiang; Liu, Chang
作者单位	1.Univ Missouri, Dept Civil & Environm Engn, Columbia, MO 65211 USA 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 4.Dalian Univ Technol, Fac Vehicle Engn & Mech, State Key Lab Struct Anal Ind Equipment, Dept Engn Mech,Int Res Ctr Computat Mech, Dalian 116024, Peoples R China 5.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Feng,Sun, Jia,Zheng, Yonggang,et al. The importance of H-2 in the controlled growth of semiconducting single-wall carbon nanotubes[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2020,54:105-111.
APA	Zhang, Feng.,Sun, Jia.,Zheng, Yonggang.,Hou, Peng-Xiang.,Liu, Chang.,...&Chen, Zhen.(2020).The importance of H-2 in the controlled growth of semiconducting single-wall carbon nanotubes.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,54,105-111.
MLA	Zhang, Feng,et al."The importance of H-2 in the controlled growth of semiconducting single-wall carbon nanotubes".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 54(2020):105-111.