Interface facilitated transformation of voids directly into stacking fault tetrahedra

doi:10.1016/j.actamat.2020.02.044

CORC > 金属研究所 > 中国科学院金属研究所

	Interface facilitated transformation of voids directly into stacking fault tetrahedra
	Kong, X. F.1,3; Gao, N.2,4,5; Beyerlein, I. J.6; Yao, B. N.1,3,7; Zheng, S. J.8,9; Ma, X. L.8; Legut, D.10,11; Germann, T. C.12; Zhang, H. J.13,14; Zhang, R. F.1,3
刊名	ACTA MATERIALIA
	2020-04-15
卷号	188 页码:623-634
关键词	Voids Stacking fault tetrahedron Interface Transformation Dislocation Damage
ISSN号	1359-6454
DOI	10.1016/j.actamat.2020.02.044
通讯作者	Zheng, S. J.(sjzheng@imr.ac.cn) ; Zhang, R. F.(zrf@buaa.edu.cn)
英文摘要	Voids, helium bubbles and stacking fault tetrahedra (SFTs) are common irradiation-induced defects in face-centered cubic (FCC) metals and their alloys that have detrimental effects on their deformation behavior and lifetime. The formation mechanisms of voids and SFTs have been investigated in single crystals but the potential augmentation of these mechanisms by a heterophase interface has not been well studied. Here, using transmission electron microscopy (TEM), we report on the stability of both SFTs and voids at interfaces in an irradiated Cu/Ag nanolayered composite. With atomistic simulations, we show that the heterophase interface can promote the transformation of voids ( <2 nm diameter) directly into SFTs. The interfacial misfit dislocations generate an atomically varying stress field that substantially reduces the activation barrier for the transformation at an interface compared to that in a single crystal or coherent interface. The transformation mechanism involves the sequential hopping of vacancies, starting at the interface and then later progressing to the nearest and next nearest atomic layers. The calculations further show that just a few helium atoms can hinder this mechanism and stabilize interfacial voids, explaining the coexistence of voids and SFTs near the interface observed experimentally. Last, the effect of stabilized defects at the interface on dislocation nucleation is studied via atomistic calculations employing quasi-static loading schemes. The results indicate that both voids and SFTs promote interfacial dislocation nucleation, which, in turn, damages the SFTs. These findings can provide the insight needed to design strategies for healing irradiation defects by interface engineering. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
资助项目	National Key Research and Development Program of China[2016YFC1102500] ; National Key Research and Development Program of China[2017YFB0702100] ; National Natural Science Foundation of China[51471018] ; National Natural Science Foundation of China[51672015] ; National Natural Science Foundation of China[51401208] ; National Natural Science Foundation of China[51771201] ; National Natural Science Foundation of China[11675230] ; National Natural Science Foundation of China[11375242] ; 111 Project[B17002] ; Academic Excellence Foundation of BUAA for PhD Students ; European Regional Development Fund in the IT4Innovations National Supercomputing Center -Path to Exascale project within the Operational Programme Research Development and Education[CZ.02.1.01/0.0/0.0/16_013/0001791] ; SGS[SP2020/150]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000527826500054
资助机构	National Key Research and Development Program of China ; National Natural Science Foundation of China ; 111 Project ; Academic Excellence Foundation of BUAA for PhD Students ; European Regional Development Fund in the IT4Innovations National Supercomputing Center -Path to Exascale project within the Operational Programme Research Development and Education ; SGS
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/138402]
专题	金属研究所_中国科学院金属研究所
通讯作者	Zheng, S. J.; Zhang, R. F.
作者单位	1.Beihang Univ, Ctr Integrated Computat Mat Engn, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China 2.Shandong Univ, Inst Frontier & Interdisciplinary Sci, Qingdao 266237, Peoples R China 3.Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China 4.Shandong Univ, Key Lab Particle Phys & Particle Irradiat MOE, Qingdao 266237, Peoples R China 5.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 6.Univ Calif Santa Barbara, Mech Engn Dept, Mat Dept, Santa Barbara, CA 93106 USA 7.Beihang Univ, Shen Yuan Honors Coll, Beijing 100191, Peoples R China 8.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 9.Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin Key Lab Mat Laminating Fabricat & Interfa, Tianjin 300130, Peoples R China 10.VSB Tech Univ Ostrava, IT4Innovat, CZ-70800 Ostrava, Czech Republic
推荐引用方式 GB/T 7714	Kong, X. F.,Gao, N.,Beyerlein, I. J.,et al. Interface facilitated transformation of voids directly into stacking fault tetrahedra[J]. ACTA MATERIALIA,2020,188:623-634.
APA	Kong, X. F..,Gao, N..,Beyerlein, I. J..,Yao, B. N..,Zheng, S. J..,...&Zhang, R. F..(2020).Interface facilitated transformation of voids directly into stacking fault tetrahedra.ACTA MATERIALIA,188,623-634.
MLA	Kong, X. F.,et al."Interface facilitated transformation of voids directly into stacking fault tetrahedra".ACTA MATERIALIA 188(2020):623-634.