Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors

doi:10.3390/cryst10030144

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	Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors
	Xia, Xiuxin 1,3; Sun, Xingdan 1,3; Wang, Hanwen 1,3; Li, Xiaoxi 1,2,3
刊名	CRYSTALS
	2020-03-01
卷号	10 期号:3 页码:9
关键词	contact alloying GaTe Pd electrode
ISSN号	2073-4352
DOI	10.3390/cryst10030144
通讯作者	Wang, Hanwen(hwwang15s@imr.ac.cn) ; Li, Xiaoxi(xxli@imr.ac.cn)
英文摘要	Recently, gallium telluride (GaTe) has triggered much attention for its unique properties and offers excellent opportunities for nanoelectronics. Yet it is a challenge to bridge the semiconducting few-layered GaTe crystals with metallic electrodes for device applications. Here, we report a method on fabricating electrode contacts to few-layered GaTe field effect transistors (FETs) by controlled micro-alloying. The devices show linear I-V curves and on/off ratio of similar to 104 on HfO2 substrates. Kelvin probe force microscope (KPFM) and energy dispersion spectrum (EDS) are performed to characterize the electrode contacts, suggesting that the lowered Schottky barrier by the diffusion of Pd element into the GaTe conduction channel may play an important role. Our findings provide a strategy for the engineering of electrode contact for future device applications based on 2DLMs.
资助项目	National Key R&D Program of China[2019YFA0307800] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[51627801]
WOS研究方向	Crystallography ; Materials Science
语种	英语
出版者	MDPI
WOS记录号	WOS:000523512100062
资助机构	National Key R&D Program of China ; National Natural Science Foundation of China (NSFC)
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/137884]
专题	金属研究所_中国科学院金属研究所
通讯作者	Wang, Hanwen; Li, Xiaoxi
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China
推荐引用方式 GB/T 7714	Xia, Xiuxin,Sun, Xingdan,Wang, Hanwen,et al. Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors[J]. CRYSTALS,2020,10(3):9.
APA	Xia, Xiuxin,Sun, Xingdan,Wang, Hanwen,&Li, Xiaoxi.(2020).Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors.CRYSTALS,10(3),9.
MLA	Xia, Xiuxin,et al."Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors".CRYSTALS 10.3(2020):9.