Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands

doi:10.1016/j.actamat.2020.01.034

CORC > 金属研究所 > 中国科学院金属研究所

	Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands
	Han, M. J.2,4; Tang, Y. L.4; Wang, Y. J.4; Zhu, Y. L.4; Ma, J. Y.1,3,4; Geng, W. R.1,4; Feng, Y. P.2,4; Zou, M. J.1,4; Zhang, N. B.1,4; Ma, X. L.3,4
刊名	ACTA MATERIALIA
	2020-04-01
卷号	187 页码:12-18
关键词	Resistive switching behavior Charged domain walls Conductive filament mode Transmission electron microscopy Piezoresponse force microscopy
ISSN号	1359-6454
DOI	10.1016/j.actamat.2020.01.034
通讯作者	Zhu, Y. L.(ylzhu@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn)
英文摘要	Ferroelectrics exhibit polarization tunable resistance switching behaviors, which are promising for next-generation non-volatile memory devices. For technological applications, thinner nanoscale arrays are expected, which feature with higher density and larger ON/OFF (R-ON/OFF) ratios in the metal/ferroelectrics/semiconductor heterojunction. Here, we acquire high density BiFeO3 (BFO) nano-islands around 10 nm in thickness displaying a high R-ON/OFF ratio of 10(3), comparable to the tunnel junctions. Moreover, both the macroscopic and microscopic resistive switching behaviors of the present BFO films reveal an unexpected filamentary-type resistive switching which is modified by the charged domain walls in nano-islands dominated by the centertype domains. Particularly, the charged domain walls spontaneously formed within the BFO nano-islands are proposed as the conductive paths based on the redistribution of carriers under the applied voltages. Potential applications for memories with large RON/OFF ratios of such kind of configurable charged domain walls are demonstrated. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
资助项目	Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China[51671194] ; National Natural Science Foundation of China[51571197] ; National Basic Research Program of China[2014CB921002] ; IMR SYNL-T.S. Ke Research Fellowship ; Youth Innovation Promotion Association CAS[2016177]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000518706700002
资助机构	Key Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China ; National Basic Research Program of China ; IMR SYNL-T.S. Ke Research Fellowship ; Youth Innovation Promotion Association CAS
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/137643]
专题	金属研究所_中国科学院金属研究所
通讯作者	Zhu, Y. L.; Ma, X. L.
作者单位	1.Univ Sci & Technol China, Jinzhai Rd 96, Hefei 230026, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Yuquan Rd 19, Beijing 100049, Peoples R China 3.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Han, M. J.,Tang, Y. L.,Wang, Y. J.,et al. Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands[J]. ACTA MATERIALIA,2020,187:12-18.
APA	Han, M. J..,Tang, Y. L..,Wang, Y. J..,Zhu, Y. L..,Ma, J. Y..,...&Ma, X. L..(2020).Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands.ACTA MATERIALIA,187,12-18.
MLA	Han, M. J.,et al."Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands".ACTA MATERIALIA 187(2020):12-18.