Thermoelectric performance of monolayer InSe improved by convergence of multivalley bands

doi:10.1063/1.5040752

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	Thermoelectric performance of monolayer InSe improved by convergence of multivalley bands
	Hung, Nguyen T.1,2; Nugraha, Ahmad R. T.1; Yang, Teng 2; Zhang, Zhidong 2; Saito, Riichiro 1
刊名	JOURNAL OF APPLIED PHYSICS
	2019-02-28
卷号	125 期号:8 页码:8
ISSN号	0021-8979
DOI	10.1063/1.5040752
通讯作者	Hung, Nguyen T.(nguyen@flex.phys.tohoku.ac.jp)
英文摘要	We theoretically investigate a possibility of improving the thermoelectric performance of monolayer InSe through convergence of multivalley energy bands, in which some distinct valleys become almost degenerate. The convergence of energy bands is achieved by applying mechanical strain. We find that the thermoelectric power factor of monolayer InSe can be significantly enhanced by nearly a factor of 3 through the band convergence in both valence (p-type) and conduction (n-type) bands under a biaxial compressive stress of about 1.16 GPa. However, the maximum enhancement of the figure of merit ZT in the p-type and n-type InSe differs each other depending on how the valleys converge in each case. The optimal scenario is that the heavy valleys approach the light valleys in the band convergence, which leads to an increase in the power factor and, at the same time, a decrease in the thermal conductivity of an electron. This optimal condition can be obtained in the strained n-type InSe that gives the largest enhancement of ZT as high as 230% ZT of unstrained InSe. In contrast, the enhancement of ZT in the strained p-type InSe, which exhibits opposite valley convergence (light valleys joining heavy ones), gives only 26% ZT of unstrained InSe. Published by AIP Publishing.
资助项目	JSPS KAKENHI[JP18J10151] ; JSPS KAKENHI[JP18H01810] ; National Key R&D Program of China[2017YFA0206301] ; CASC, China[U1537204]
WOS研究方向	Physics
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000460033800006
资助机构	JSPS KAKENHI ; National Key R&D Program of China ; CASC, China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/132191]
专题	金属研究所_中国科学院金属研究所
通讯作者	Hung, Nguyen T.
作者单位	1.Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Hung, Nguyen T.,Nugraha, Ahmad R. T.,Yang, Teng,et al. Thermoelectric performance of monolayer InSe improved by convergence of multivalley bands[J]. JOURNAL OF APPLIED PHYSICS,2019,125(8):8.
APA	Hung, Nguyen T.,Nugraha, Ahmad R. T.,Yang, Teng,Zhang, Zhidong,&Saito, Riichiro.(2019).Thermoelectric performance of monolayer InSe improved by convergence of multivalley bands.JOURNAL OF APPLIED PHYSICS,125(8),8.
MLA	Hung, Nguyen T.,et al."Thermoelectric performance of monolayer InSe improved by convergence of multivalley bands".JOURNAL OF APPLIED PHYSICS 125.8(2019):8.