Behavioural investigation of InN nanodots by surface topographies and phase images

doi:10.1088/0022-3727/44/44/445306

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	Behavioural investigation of InN nanodots by surface topographies and phase images
	Deng, Qingwen 2; Wang, Xiaoliang 1,2,3; Xiao, Hongling 2,3; Wang, Cuimei 2,3; Yin, Haibo 2,3; Chen, Hong 2,3; Lin, Defeng 2; Li, Jinmin 1,2,3; Wang, Zhanguo 3; Hou, Xun 1
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2011-11-09
卷号	44 期号:44 页码:6
ISSN号	0022-3727
DOI	10.1088/0022-3727/44/44/445306
通讯作者	Deng, Qingwen(daven@semi.ac.cn)
英文摘要	We employ surface topographies and phase images to investigate InN nanodots. The samples are annealed at 450, 500 and 550 square. The results reveal that the statistical distributions of number density and mean size depend on annealing ambient. The behaviours of thermal annealing between InN films and InN nanodots are distinguishable: the alloying process of InN and GaN not only occurs in InN platelets, but also in InN nanodots once the samples are annealed at the growth temperature of InN nanodots, while the main change in InN films is the decomposition of InN into In droplets and N-2.
资助项目	Knowledge Innovation Engineering of the Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000296591600014
资助机构	Knowledge Innovation Engineering of the Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/106616]
专题	金属研究所_中国科学院金属研究所
通讯作者	Deng, Qingwen
作者单位	1.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Deng, Qingwen,Wang, Xiaoliang,Xiao, Hongling,et al. Behavioural investigation of InN nanodots by surface topographies and phase images[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(44):6.
APA	Deng, Qingwen.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yin, Haibo.,...&Hou, Xun.(2011).Behavioural investigation of InN nanodots by surface topographies and phase images.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(44),6.
MLA	Deng, Qingwen,et al."Behavioural investigation of InN nanodots by surface topographies and phase images".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.44(2011):6.