Comparison of as-grown and annealed GaN/InGaN:Mg samples

doi:10.1088/0022-3727/44/34/345101

CORC > 金属研究所 > 中国科学院金属研究所

	Comparison of as-grown and annealed GaN/InGaN:Mg samples
	Deng, Qingwen 1; Wang, Xiaoliang 1,2,3; Xiao, Hongling 1,2; Wang, Cuimei 1,2; Yin, Haibo 1,2; Chen, Hong 1,2; Lin, Defeng 1; Jiang, Lijuan 1,2; Feng, Chun 1,2; Li, Jinmin 1,2,3
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2011-08-31
卷号	44 期号:34 页码:5
ISSN号	0022-3727
DOI	10.1088/0022-3727/44/34/345101
通讯作者	Deng, Qingwen(daven@semi.ac.cn)
英文摘要	Mg-doped InGaN was grown on unintentionally doped GaN layer, and Mg and defect behaviours in both GaN and InGaN : Mg were investigated through photoluminescence measurement at 7K. Mg acceptor was found in unintentionally doped GaN after thermal annealing in N(2) ambient, and Mg activation energy was estimated to be 200 meV and 110 meV for GaN and InGaN, respectively. Particularly, the ultraviolet band (3.0-3.2 eV) in the GaN layer was infrequently observed in the unannealed sample but quenched in the annealed sample; this band may be associated with oxygen-substituted nitrogen defects. Moreover, the measurement errors of photoluminescence and x-ray diffraction originated from strain were taken into account.
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000294761500005
资助机构	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/105549]
专题	金属研究所_中国科学院金属研究所
通讯作者	Deng, Qingwen
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Deng, Qingwen,Wang, Xiaoliang,Xiao, Hongling,et al. Comparison of as-grown and annealed GaN/InGaN:Mg samples[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(34):5.
APA	Deng, Qingwen.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yin, Haibo.,...&Hou, Xun.(2011).Comparison of as-grown and annealed GaN/InGaN:Mg samples.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(34),5.
MLA	Deng, Qingwen,et al."Comparison of as-grown and annealed GaN/InGaN:Mg samples".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.34(2011):5.