Investigations on the local structure and the EPR parameters for Cu2+-doped GaN | |
Wei, Li-Hua1; Wu, Shao-Yi1,2; Zhang, Zhi-Hong1; Wang, Hui1; Wang, Xue-Feng1 | |
刊名 | MODERN PHYSICS LETTERS B |
2008-07-20 | |
卷号 | 22期号:18页码:1739-1747 |
关键词 | electron paramagnetic resonance defect structures crystal-fields and spin Hamiltonians Cu2+ GaN |
ISSN号 | 0217-9849 |
通讯作者 | Wu, Shao-Yi(shaoyiwu@163.com) |
英文摘要 | The local structure and the EPR parameters (g factors and the hyperfine structure constants) for Cu2+ in GaN are theoretically studied from the perturbation formulas of these parameters for a 3d(9) ion in trigonally distorted tetrahedra. In these formulas, the ligand orbital and spin-orbit coupling contributions are taken into account from the cluster approach, in view of the strong covalency effect of the system. Based on the studies, the impurity Cu2+ is found not to occupy exactly the host Ga3+ site but to suffer a slight displacement (approximate to 0.004 angstrom) towards the ligand triangle along C-3 axis due to charge and size mismatching substitution. The theoretical EPR parameters show good agreement with the experimental data. The validity of the impurity displacement is also discussed. |
WOS研究方向 | Physics |
语种 | 英语 |
出版者 | WORLD SCIENTIFIC PUBL CO PTE LTD |
WOS记录号 | WOS:000258297400005 |
内容类型 | 期刊论文 |
源URL | [http://ir.imr.ac.cn/handle/321006/95415] |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Wu, Shao-Yi |
作者单位 | 1.Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China |
推荐引用方式 GB/T 7714 | Wei, Li-Hua,Wu, Shao-Yi,Zhang, Zhi-Hong,et al. Investigations on the local structure and the EPR parameters for Cu2+-doped GaN[J]. MODERN PHYSICS LETTERS B,2008,22(18):1739-1747. |
APA | Wei, Li-Hua,Wu, Shao-Yi,Zhang, Zhi-Hong,Wang, Hui,&Wang, Xue-Feng.(2008).Investigations on the local structure and the EPR parameters for Cu2+-doped GaN.MODERN PHYSICS LETTERS B,22(18),1739-1747. |
MLA | Wei, Li-Hua,et al."Investigations on the local structure and the EPR parameters for Cu2+-doped GaN".MODERN PHYSICS LETTERS B 22.18(2008):1739-1747. |
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