Electronic stopping power under channeling conditions for slow ions in Ge using first principles

doi:10.1103/PhysRevA.102.012803

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	Electronic stopping power under channeling conditions for slow ions in Ge using first principles
	Fu, Yan-Long ; Li, Chang-Kai ; Sang, Hai-Bo ; Cheng, Wei ; Zhang, Feng-Shou
刊名	PHYSICAL REVIEW A
	2020
卷号	102 期号:1
关键词	ENERGY-LOSS RADIATION PROTONS SCATTERING ACCURATE HYDROGEN PHASE AU H+ AL
DOI	10.1103/PhysRevA.102.012803
英文摘要	The electronic stopping power for low-velocity ions (including protons and alpha particles) in the semiconductor Ge is investigated with the aid of time-dependent density functional theory based on Ehrenfest dynamics. The purpose of this study is to further learn about the energy loss mechanisms of the slow ions. When the projectile ions pass through the crystal film along the < 100 >, < 110 >, and < 111 > channels, we analyze the channeling effect of the electronic stopping power in detail by investigating the channeling electronic density, the stopping force, and the trapped electrons. Our results are in good agreement with the available experimental data and the other theoretical calculations, which demonstrate that this approach is able to reasonably describe the electronic stopping power. Furthermore, these results can act as the reference data for the ion-beam irradiation of Ge in the low-energy regime.
学科主题	Optics ; Physics
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/20666]
专题	2020专题
作者单位	1.Zhang, FS (corresponding author), Beijing Radiat Ctr, Beijing 100875, Peoples R China. 2.Cheng, W 3.Zhang, FS (corresponding author), Beijing Normal Univ, Coll Nucl Sci & Technol, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China. 4.Zhang, FS (corresponding author), Ctr Theoret Nucl Phys, Natl Lab Heavy Ion Accelerator Lanzhou, Lanzhou 730000, Peoples R China. 5.Cheng, W (corresponding author), Chinese Acad Sci, Ningbo Inst Ind Technol, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Fu, Yan-Long,Li, Chang-Kai,Sang, Hai-Bo,et al. Electronic stopping power under channeling conditions for slow ions in Ge using first principles[J]. PHYSICAL REVIEW A,2020,102(1).
APA	Fu, Yan-Long,Li, Chang-Kai,Sang, Hai-Bo,Cheng, Wei,&Zhang, Feng-Shou.(2020).Electronic stopping power under channeling conditions for slow ions in Ge using first principles.PHYSICAL REVIEW A,102(1).
MLA	Fu, Yan-Long,et al."Electronic stopping power under channeling conditions for slow ions in Ge using first principles".PHYSICAL REVIEW A 102.1(2020).