Threshold-Tunable, Spike-Rate-Dependent Plasticity Originating from Interfacial Proton Gating for Pattern Learning and Memory

doi:10.1021/acsami.9b22369

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2020专题

	Threshold-Tunable, Spike-Rate-Dependent Plasticity Originating from Interfacial Proton Gating for Pattern Learning and Memory
	Ren, Zheng Yu ; Zhu, Li Qiang ; Guo, Yan Bo ; Long, Ting Yu ; Yu, Fei ; Xiao, Hui ; Lu, Hong Liang
刊名	ACS APPLIED MATERIALS & INTERFACES
	2020
卷号	12 期号:6 页码:7833-7839
关键词	LONG-TERM POTENTIATION SYNAPTIC PLASTICITY ARTIFICIAL SYNAPSE TRANSISTOR DEVICE MODEL
DOI	10.1021/acsami.9b22369
英文摘要	Recently, neuromorphic devices have been receiving increasing interest in the field of artificial intelligence (AI). Realization of fundamental synaptic plasticities on hard-ware devices would endow new intensions for neuromorphic devices. Spike-rate-dependent plasticity (SRDP) is one of the most important synaptic learning mechanisms in brain cognitive behaviors. It is thus interesting to mimic the SRDP behaviors on solid-state neuromorphic devices. In the present work, nanogranular phosphorus silicate glass (PSG)-based proton conductive electrolyte-gated oxide neuromorphic transistors have been proposed. The oxide neuromorphic transistors have good transistor performances and frequency-dependent synaptic plasticity behavior. Moreover, the neuromorphic transistor exhibits SRDP activities. Interestingly, by introducing priming synaptic stimuli, the modulation of threshold frequency value distinguishing synaptic potentiation from synaptic depression is realized for the first time on an electrolyte-gated neuromorphic transistor. Such a mechanism can be well understood with interfacial proton gating effects of the nanogranular PSG-based electrolyte. Furthermore, the effects of SRDP learning rules on pattern learning and memory behaviors have been conceptually demonstrated. The proposed neuromorphic transistors have potential applications in neuromorphic engineering.
学科主题	Science & Technology - Other Topics ; Materials Science
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/19983]
专题	2020专题
作者单位	1.Zhu, LQ (corresponding author), Ningbo Univ, Sch Phys Sci & Technol, Ningbo 315211, Peoples R China. 2.Zhu, LQ (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China.
推荐引用方式 GB/T 7714	Ren, Zheng Yu,Zhu, Li Qiang,Guo, Yan Bo,et al. Threshold-Tunable, Spike-Rate-Dependent Plasticity Originating from Interfacial Proton Gating for Pattern Learning and Memory[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(6):7833-7839.
APA	Ren, Zheng Yu.,Zhu, Li Qiang.,Guo, Yan Bo.,Long, Ting Yu.,Yu, Fei.,...&Lu, Hong Liang.(2020).Threshold-Tunable, Spike-Rate-Dependent Plasticity Originating from Interfacial Proton Gating for Pattern Learning and Memory.ACS APPLIED MATERIALS & INTERFACES,12(6),7833-7839.
MLA	Ren, Zheng Yu,et al."Threshold-Tunable, Spike-Rate-Dependent Plasticity Originating from Interfacial Proton Gating for Pattern Learning and Memory".ACS APPLIED MATERIALS & INTERFACES 12.6(2020):7833-7839.