Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization

doi:10.1145/3381860

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	Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization
	Ni, Jiacheng 1; Liu, Keren 1; Wu, Bi 1; Zhao, Weisheng 1; Cheng, Yuanqing 1; Zhang, Xiaolong 2; Wang, Ying 3
刊名	ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS
	2020-07-01
卷号	16 期号:3 页码:18
关键词	STT-MRAM write energy reductions data patterns cache hierarchy
ISSN号	1550-4832
DOI	10.1145/3381860
英文摘要	Traditional memory technologies face severe challenges in meeting the ever-increasing power and memory bandwidth requirements for high-performance computing and big-data analyses. Several emerging memory technologies are promising as the replacements of SRAM or DRAM. Among them, STT-MRAM can be used to replace SRAM as the last-level cache (LLC). However, it suffers from high write energy and latency. In this article, we investigate data patterns written from SRAM-based upper-level cache to STT-MRAM-based LLC to explore the write energy reduction potential. Depending on the data layoutwithin a cache line, redundant bits can be identified and eliminated from write back operations to save STT-MRAM write energy. We also propose a dynamic profiling method to accommodate different application characteristics. The extensive simulation results show that write energy can be saved by 37.05% similar to 38.89% for static profiling and 19.76% similar to 34.29% for dynamic profiling.
资助项目	Beijing Natural Science Foundation[4192035] ; Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20180307123657364]
WOS研究方向	Computer Science ; Engineering ; Science & Technology - Other Topics
语种	英语
出版者	ASSOC COMPUTING MACHINERY
WOS记录号	WOS:000582598100006
内容类型	期刊论文
源URL	[http://119.78.100.204/handle/2XEOYT63/15492]
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Cheng, Yuanqing
作者单位	1.Beihang Univ, 37 Xueyuan Rd, Beijing 100191, Peoples R China 2.Beijing ByteDance Technol Co Ltd, 48 Zhichun Rd, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Comp Technol, 6 Kexueyuan South Rd, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Ni, Jiacheng,Liu, Keren,Wu, Bi,et al. Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization[J]. ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS,2020,16(3):18.
APA	Ni, Jiacheng.,Liu, Keren.,Wu, Bi.,Zhao, Weisheng.,Cheng, Yuanqing.,...&Wang, Ying.(2020).Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization.ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS,16(3),18.
MLA	Ni, Jiacheng,et al."Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization".ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS 16.3(2020):18.