Theoretical Analysis of Strain-Optoelectronic Properties in Externally Deformed Ge/GeSi Quantum Well Nanomembranes via Neutral Plane Modulation

	Theoretical Analysis of Strain-Optoelectronic Properties in Externally Deformed Ge/GeSi Quantum Well Nanomembranes via Neutral Plane Modulation
	Jiushuang Zhang; Yun Xu; Weitong Wu; Wei Lu; Guofeng Song
刊名	PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
	2020
卷号	257 期号:8 页码:1900732
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30288]
专题	半导体研究所_纳米光电子实验室
推荐引用方式 GB/T 7714	Jiushuang Zhang; Yun Xu; Weitong Wu; Wei Lu; Guofeng Song. Theoretical Analysis of Strain-Optoelectronic Properties in Externally Deformed Ge/GeSi Quantum Well Nanomembranes via Neutral Plane Modulation[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2020,257(8):1900732.
APA	Jiushuang Zhang; Yun Xu; Weitong Wu; Wei Lu; Guofeng Song.(2020).Theoretical Analysis of Strain-Optoelectronic Properties in Externally Deformed Ge/GeSi Quantum Well Nanomembranes via Neutral Plane Modulation.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,257(8),1900732.
MLA	Jiushuang Zhang; Yun Xu; Weitong Wu; Wei Lu; Guofeng Song."Theoretical Analysis of Strain-Optoelectronic Properties in Externally Deformed Ge/GeSi Quantum Well Nanomembranes via Neutral Plane Modulation".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257.8(2020):1900732.