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	Semiconductor device with epitaxially grown active layer adjacent an optically passive region
	LUKAS CZORNOMAZ; MIRJA RICHTER; HEIKE E. RIEL; JENS HOFRICHTER
	2014-05-07
著作权人	INTERNATIONAL BUSINESS MACHINES CORPORATION
专利号	GB2507513A
国家	英国
文献子类	发明申请
其他题名	Semiconductor device with epitaxially grown active layer adjacent an optically passive region
英文摘要	A semiconductor device 1 comprising an optically passive aspect 2, and an optically active material 6, wherein the optically passive aspect 2 is patterned to comprise a photonic crystal structure 4 with a predefined structure 5, and the optically active material 6 is grown in the predefined structure 5 with a layer 7 acting as a seed layer. Any material which exceeds predefined area 5 may be removed by etching or polishing. The optically active material 6 may be crystalline or amorphous and performs light generation, amplification, detection or modulation. The optically passive region 2 may form a wire waveguide 3. A VCSEL may be formed by the optically active material 6. The cross section of the optically passive region 2 may be smaller than or the same size as that of the predefined structure 5, there may be a tapered region between the optically passive region and the structure 5. The photonic crystal may be a 2D crystal.
公开日期	2014-05-07
申请日期	2012-10-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/93111]
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式 GB/T 7714	LUKAS CZORNOMAZ,MIRJA RICHTER,HEIKE E. RIEL,et al. Semiconductor device with epitaxially grown active layer adjacent an optically passive region. GB2507513A. 2014-05-07.

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