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	HYBRID INTEGRATION BASED ON WAFER-BONDING OF DEVICES TO AISb MONOLITHICALLY GROWN ON Si
	HUFFAKER, DIANA L.; DAWSON, LARRY R.; BALAKRISHNAN, GANESH
	2007-11-29
著作权人	STC.UNM
专利号	US20070275492A1
国家	美国
文献子类	发明申请
其他题名	HYBRID INTEGRATION BASED ON WAFER-BONDING OF DEVICES TO AISb MONOLITHICALLY GROWN ON Si
英文摘要	Exemplary embodiments provide a semiconductor fabrication method including a combination of monolithic integration techniques with wafer bonding techniques. The resulting semiconductor devices can be used in a wide variety of opto-electronic and/or electronic applications such as lasers, light emitting diodes (LEDs), phototvoltaics, photodetectors and transistors. In an exemplary embodiment, the semiconductor device can be formed by first forming an active-device structure including an active-device section disposed on a thinned III-V substrate. The active-device section can include OP and/or EP VCSEL devices. A high-quality monolithic integration structure can then be formed with low defect density through an interfacial misfit dislocation. In the high-quality monolithic integration structure, a thinned III-V mating layer can be formed over a silicon substrate. The thinned III-V substrate of the active-device structure can subsequently be wafer-bonded onto the thinned III-V mating layer of the high-quality monolithic integration structure forming an optoelectronic semiconductor device on silicon.
公开日期	2007-11-29
申请日期	2007-01-11
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/90852]
专题	半导体激光器专利数据库
作者单位	STC.UNM
推荐引用方式 GB/T 7714	HUFFAKER, DIANA L.,DAWSON, LARRY R.,BALAKRISHNAN, GANESH. HYBRID INTEGRATION BASED ON WAFER-BONDING OF DEVICES TO AISb MONOLITHICALLY GROWN ON Si. US20070275492A1. 2007-11-29.

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