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	Laser diodes, leds, and silicon integrated sensors on patterned substrates
	PIAO, JIE
	2019-02-21
著作权人	PIAO, JIE
专利号	WO2019035107A1
国家	世界知识产权组织
文献子类	发明申请
其他题名	Laser diodes, leds, and silicon integrated sensors on patterned substrates
英文摘要	The present disclosure falls into the field of optoelectronics, particularly, includes the design, epitaxial growth, fabrication, and characterization of Laser Diodes (LDs) operating in the ultraviolet (UV) to infrared (IR) spectral regime on patterned substrates (PSs) made with (formed on) low cost, large size Si, or GaN on sapphire, GaN, and other wafers. We disclose three types of PSs, which can be universal substrates, allowing any materials (Ill-Vs, II-VIs, etc.) grown on top of it with low defect and/or dislocation density.
公开日期	2019-02-21
申请日期	2018-08-20
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89907]
专题	半导体激光器专利数据库
作者单位	PIAO, JIE
推荐引用方式 GB/T 7714	PIAO, JIE. Laser diodes, leds, and silicon integrated sensors on patterned substrates. WO2019035107A1. 2019-02-21.

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