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	Semiconductor light emitting device applied with semiconductor light waveguide
	KAWAGUCHI HITOSHI; FURUKAWA YOSHITAKA
	1980-03-08
著作权人	NIPPON TELEGRAPH & TELEPHONE
专利号	JP1980033095A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device applied with semiconductor light waveguide
英文摘要	PURPOSE:To propagate light of predetermined mode in effective light waveguide by providing a photoconductive semiconductor layer with a light transmitting mode control semiconductor layer on one light enclosing layer as interposed with smaller light enclosing layer having lower refractive index than that of the photoconductive semiconductor layer. CONSTITUTION:P-type and N-type Al0.3Ga0.7As light enclosing layers 2, 3, P-type GaAs light conductive layer 1, P-type Al0.4Ga0.6As light transmission control layer 6 are formed on N-type GaAs substrate 7. Layers 6A, 6B are disposed with the same material and thickness as the layer 6' in predetermined interval at the position presenting no layer 6' on the layer 2, and P-type electrode connecting GaAs layers 8, 8A, 8B are formed on the layers 6', and N-type electrode connecting GaAs layers 8, 8A, 8B are formed on the layers 6A, 6B. Oxide films 11', 11A, 11B are selectively formed on the side surfaces of the layers 6', 6A, 6B to thereby form ohmic electrodes 9, 10. According to this configuration, when predetermined voltage is applied to the electrodes 9, 10, light is emitted from the portion of the region 5, only the light of predetermined mode is transmitted through the region 5 as effective waveguide and introduced from the end outwardly.
公开日期	1980-03-08
申请日期	1979-08-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89887]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGRAPH & TELEPHONE
推荐引用方式 GB/T 7714	KAWAGUCHI HITOSHI,FURUKAWA YOSHITAKA. Semiconductor light emitting device applied with semiconductor light waveguide. JP1980033095A. 1980-03-08.

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