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	Semiconductor luminous element and its manufacture
	YAMAMOTO SABUROU; YANO MORICHIKA; KURATA YUKIO; MATSUI KANEKI; KOMURO AKIRA
	1979-11-15
著作权人	SHARP KK
专利号	JP1979146585A
国家	日本
文献子类	发明申请
其他题名	Semiconductor luminous element and its manufacture
英文摘要	PURPOSE:To form the active layer with limitation between two regrown layers by giving the partial dissolution and solidification to the crystal growth layer. CONSTITUTION:The n-type Ga0.7.Al0.2As2 and active layer p-type GaAs3 are formed with addition of Si, and then n-type Ga0.7Al0.3 As4 and n-type GaAs5 are formed with addition of Te onto n GaAs substrate 1 in lamination, and then CVD oxide film 8 is coated with parallel windows are drilled 9 with space W between. A contact is given with GaAlAS solution in the furnace, and thus layer 5 remains with a high reproducibility and with depth d of the melt back plus stripe width r = W -2d. The temperature is lowered down after end of the melt back, and thus the recrystalization is given within layer 5 with the melt back applied. The crystal is dissolved with HF after growth of Ga1-XAlAs (X>0.5). Film 8 is removed, and then oxide film 10 is coated again with the window drilled at stripe-type remaining part 1 And electrode 13 is formed on film 10 and stripe 1 With this method, the buried stripe structure is ibtained in a high reproducibility with no oxide film formed to the stripe and with no fault caused at the recrystalization time. At the same time, the fundamental lateral mode oscillation can be obtained within the microspot by reducing the stripe width.
公开日期	1979-11-15
申请日期	1978-05-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89785]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	YAMAMOTO SABUROU,YANO MORICHIKA,KURATA YUKIO,et al. Semiconductor luminous element and its manufacture. JP1979146585A. 1979-11-15.

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