| Semiconductor light emitting device | |
| NISHI HIROSHI; YANO MITSUHIRO; OOSAKA SHIGEO; HANAMITSU KIYOSHI | |
| 1980-06-17 | |
| 著作权人 | FUJITSU LTD |
| 专利号 | JP1980080387A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To secure a laser for oscillation in stable unified basic transverse mode and thus to obtain a light ouput of good linearity by an arrangement wherein the width of a current carrying region and that of a light emitting region are almost equalized each other, and an electrode is formed through a thin clad layer. CONSTITUTION:An n-Ga0.7Al0.3As clad layer 2, p-Ga0.92Al0.08As activated layer 3, p-Ga0.7Al0.3As clad layer 4, p-GaAs 5 are laminated on an n-GaAs The layers 4 and 5 are partly etched with a mask w in width applied thereon, subjected to S diffusion with a mask s in width applied further to have a clad part 4b changed to n-type, then subjected to Zn diffusion to have an ohmic junction layer 6 provided thereon, and electrodes 7, 8 of ti-Pt-Au structure are arranged. The width s is kept thus a little larger than the width w, and electrodes are provided on a thin part of the clad layer 4, therefore a laser is secured for oscillation in stable unified basic mode, and a light emitting characteristic is obtainable in good linearity. |
| 公开日期 | 1980-06-17 |
| 申请日期 | 1978-12-11 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89770]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHI HIROSHI,YANO MITSUHIRO,OOSAKA SHIGEO,et al. Semiconductor light emitting device. JP1980080387A. 1980-06-17. |
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