QQ客服 官方微博 反馈留言

	Double heterojunction type semiconductor laser
	SAKAMOTO MASAMICHI; KAISE KIKUO
	1988-02-17
著作权人	SONY CORP
专利号	JP1988036590A
国家	日本
文献子类	发明申请
其他题名	Double heterojunction type semiconductor laser
英文摘要	PURPOSE:To implement simplification in manufacturing, stabilization of characteristics, improvement of reliability and the like and to improve astigmatism and a threshold current value, by providing one step part on a substrate, and providing the thickness of a clad layer on the substrate side so that light in an active layer is hardly absorbed by the substrate in the entire region. CONSTITUTION:One step part 21 is formed on a semiconductor substrate A first clad layer 2 is formed on a semiconductor substrate 1 having said step part 2 The thickness of the layer 2 is made to have a value so that light loss is hardly yielded by absorption of the light when the light from an active layer 3 reaches the semiconductor substrate 1 in the entire region. For example, the first clad layer 2 comprising n-type Al0.45Ga0.55As is formed to a thickness of about 5 mum on the n-type GaAs single crystal substrate 1, on which the step part 21 is formed. An active layer 3 of Al0.10Ga0.90As is formed to a thickness of 500Angstrom the layer 3, p-type Al0.45Ga0.55As is formed to a thickness of about 5mum. An n-type GaAs cap layer 6 is further formed to a thickness of about 0.5mum. Then, p-type impurity Zn is selectively diffused or ions are implanted, and a current conducting region 22 is formed.
公开日期	1988-02-17
申请日期	1986-07-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89681]
专题	半导体激光器专利数据库
作者单位	SONY CORP
推荐引用方式 GB/T 7714	SAKAMOTO MASAMICHI,KAISE KIKUO. Double heterojunction type semiconductor laser. JP1988036590A. 1988-02-17.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。