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	Semiconductor laser
	OGURA MUTSURO
	1987-07-28
著作权人	KOGYO GIJUTSUIN
专利号	JP1987171180A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To manufacture a semiconductor laser having structure in which the improvement of a laser outgoing shape and the stabilization of an oscillation mode can also be expected even when an output is enhanced by thickening an active layer by obliquely forming at least one end surface of both end surfaces of said active layer at an angle smaller than perpendicularity to an optical axis along the longitudinal direction of said active layer. CONSTITUTION:At least one end surface 15 of both end surfaces of an active layer 11 constituting an optical resonator is formed as an inclined plane shaping the inclination of an angle thetaa smaller than perpendicularity to an axis Az. The conditions of resonance are satisfied only by upward plane waves W1 vertically projected to the active-layer end surface 15 in plane waves wave- guiding in the active layer 11, and downward plane waves W2 are absorbed through a clad layer 12 as shown in a virtual line or at least the conditions of resonance are not satisfied. Accordingly, phase phi on the laser outgoing end surface 15 is equalized, and a far-field pattern Ir is also changed into a unimodal pattern, in which a peak is positioned at the center, and stabilized.
公开日期	1987-07-28
申请日期	1986-01-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89364]
专题	半导体激光器专利数据库
作者单位	KOGYO GIJUTSUIN
推荐引用方式 GB/T 7714	OGURA MUTSURO. Semiconductor laser. JP1987171180A. 1987-07-28.

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