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	Manufacture of semiconductor structure
	FUKUZAWA TADASHI; ITO KAZUHIRO; NAKAMURA HITOSHI; MATSUDA HIROSHI
	1989-09-18
著作权人	HIKARI GIJUTSU KENKYU KAIHATSU KK
专利号	JP1989232715A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor structure
英文摘要	PURPOSE:To easily manufacture a microscopic quantum fine wire structure in a high degree of uniformly by a method wherein, after the constituent atoms of the ion crystal thin film of a substrate are partly removed using an electron beam holography, crystal is caused to grow by the irradiation of a molecular beam and the like, and semiconductor crystal is selectively made to grow. CONSTITUTION:After a buffer layer such as Al0.3Ga0.7As 9, for example, is formed epitaxially by a molecular beam on a GaAs crystal substrate 8, CaF2 is vapor-deposited in several atomic layers, a CaF2 layer 10 is formed, and an electron beam holography is made to irradiate in a high degree of vacuum atmosphere. At this point, atoms F are removed from the CaF2 of the region having high electron density of a standing wave 7, and a region 11, on the surface of which active Ca atoms appear, is formed. Besides, a Ga-As molecular beam is applied to a sample, GaAs crystal is made to grow only on the region 11 where active Ca atoms exist, and a quantum fine wire 12 is obtained. Then, after the remaining CaF2 is removed by application of an ion beam, an Al0.3 Ga0.7As layer 13 is made to grow using a molecular beam epitaxial growth method, and the quantum fine wire 12 is buried.
公开日期	1989-09-18
申请日期	1988-03-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89305]
专题	半导体激光器专利数据库
作者单位	HIKARI GIJUTSU KENKYU KAIHATSU KK
推荐引用方式 GB/T 7714	FUKUZAWA TADASHI,ITO KAZUHIRO,NAKAMURA HITOSHI,et al. Manufacture of semiconductor structure. JP1989232715A. 1989-09-18.

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