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	Semiconductor laser device
	SUGINO TAKASHI; ITOU KUNIO
	1984-02-16
著作权人	MATSUSHITA DENKI SANGYO KK
专利号	JP1984029487A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To provide an active layer with an effective refractive index distribution stabilizing the oscillating lateral modes by a method wherein the constants of physical properties such as composing carrier concentration, forbidden band width, dielectric constant (refractive index) and absorption coefficient of at least one layer of the clad layers adjoining an active layer are differently constituted between the striping part in the clad layer and the both sides. CONSTITUTION:A striping projection is formed on the surface (100) of a CaAs substrate 14 selecting its extending direction toward and the first N type Ga0.65Al0.35As layer 15, a nondope Ga0.95Al0.05Al active layer 16, a P type Ga0.65Al0.35As clad layer 17 and an N type GaAs layer 18 are successively grown on the surface (100). At this time, the Al composition of the first clad layer 15 ( I ) grown on the part wherein the projection is molten back becomes smaller than the Al composition of the crystal (II) grown on the both side flat parts making a step difference in the refractive index distribution in the first layer 15 to form the effective refractive index distribution of the active layer 16 grown on said layer 15 into convex type closing the oscillated light in the striping part ( I ) subject to higher refractive index Nc
公开日期	1984-02-16
申请日期	1982-08-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89270]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	SUGINO TAKASHI,ITOU KUNIO. Semiconductor laser device. JP1984029487A. 1984-02-16.

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