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	Iii-v family mixed crystalline semiconductor device
	USUI AKIRA
	1984-05-16
著作权人	NIPPON DENKI KK
专利号	JP1984084417A
国家	日本
文献子类	发明申请
其他题名	Iii-v family mixed crystalline semiconductor device
英文摘要	PURPOSE:To obtain a deposited layer with few displacement by a method wherein a graded layer, whose composition changes step by step or continuously, is formed on a III-V family semiconductor substrate and a III-V family layer, which has a lattice constant different from that of the substrate, is formed on the graded layer by epitaxial growth and at that time a mixed crystalline epitaxial layer of III-V family of more than four components is used as the graded layer. CONSTITUTION:A growing chamber of a growing equipment is divided into an upper level 1 and a lower level 2 and a substrate holder 4 which is bent and to which a GaAs substrate 3 is attached is provided to the outlet side of the growing chamber so as to be rotated freely. Thus, the holder 4 is rotated and the substrate 3 is faced against the outlet side of the upper level 1 or the lower level 2. Then, using the upper level 1, AsH3 gas is introduced through an inlet pipe 5 into the upper level 1 and the temperature is risen and onto an In source 6 and Ga source 7 of the lower level 2, HCl gas is introduced and through the inlet pipe AaH3-PH3 gas is introduced and growing condition of InGaAsP mixed crystal growth is determined. After that, AsH3, PH3 are introduced onto an In source 8 and Ga source 9 in the upper level 2 and a deposition layer overlapped on the previous layer is formed.
公开日期	1984-05-16
申请日期	1982-11-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89182]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	USUI AKIRA. Iii-v family mixed crystalline semiconductor device. JP1984084417A. 1984-05-16.

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