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	Semiconductor laser and manufacture thereof
	MANNOU MASAYA; OGURA MOTOTSUGU
	1990-08-24
著作权人	松下電器産業株式会社
专利号	JP1990213181A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser and manufacture thereof
英文摘要	PURPOSE:To improve characteristics and the reproducibility and reliability thereof in any oscillation wavelength by providing a double hetero structure constructed of a lower-side clad layer using (AlGa)As layer and of an active layer and a first upper- side clad layer, and further an oxidation preventing layer and an internal current narrowing layer having a larger Al composition ratio than the oxidation preventing layer, on a GaAs substrate. CONSTITUTION:A double hetero structure wherein an (AlGa)As layer is laid as an active layer 3 and this active layer 3 is held between an (AlGa)As clad layer 2 of a first conductivity type being different in a composition ratio from the layer 3 and a first (AlGa)As clad layer 4 of a second conductivity type is provided on a GaAs substrate 1 of the first conductivity type, and an (AlxGaIn)P oxidation preventing layer 9 of the second conductivity type and an (AlyGaIn)P internal current narrowing layer 10 of the first conductivity type are provided on the upper side of the active layer 3. Herein, 0<=x<=y<=0.5. According to this constitution, light absorption in the oxidation preventing layer 9 does not occur if the light is in a region of a wavelength which can be oscillated, and the internal current narrowing layer 10 can be made to have a larger forbidden band width and a smaller refractive index than the first clad layer 4. Accordingly, it is possible to execute a horizontal mode control being stable in a refractive index guide.
公开日期	1990-08-24
申请日期	1989-02-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89134]
专题	半导体激光器专利数据库
作者单位	松下電器産業株式会社
推荐引用方式 GB/T 7714	MANNOU MASAYA,OGURA MOTOTSUGU. Semiconductor laser and manufacture thereof. JP1990213181A. 1990-08-24.

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