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	Manufacture of photoelectronic integrated element
	AOKI MASAKANE; HIROE AKIHIKO; FUJITA SHUNSUKE
	1992-05-15
著作权人	RICOH CO LTD
专利号	JP1992142503A
国家	日本
文献子类	发明申请
其他题名	Manufacture of photoelectronic integrated element
英文摘要	PURPOSE:To eliminate the flawing and staining of an optical waveguide layer on the surface of the photoelectronic integrated element due to the sticking of cutting powder on the surface of the photoelectronic integrated element by cutting a semiconductor wafer into chips by photoelectronic integrated element areas after a protection film is formed on the semiconductor wafer. CONSTITUTION:A photoresist film 3 is formed by coating on the semiconductor wafer 1 where photoelectronic integrated elements are formed and an exposing, a developing, and a baking process are carried out so that the photoresist film is removed on scribing lines 4 while left on the photoelectronic integrated element areas 2. Then the semiconductor wafer 1 is scribed or diced along the scribing lines 4 and cut into the chips by the individual photoelectronic integrated element areas 2. At this time, the cutting chip 5 at the time of the cutting sticks on the photoresist films of the chips, but the photoresist films 3 serve as protection films, so the cutting chip 5 does not contact the photoelectronic integrated element areas 2 directly. Then the photoresist films 3 are peeled off in peeling liquid together with the cutting chip 5.
公开日期	1992-05-15
申请日期	1990-10-03
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88995]
专题	半导体激光器专利数据库
作者单位	RICOH CO LTD
推荐引用方式 GB/T 7714	AOKI MASAKANE,HIROE AKIHIKO,FUJITA SHUNSUKE. Manufacture of photoelectronic integrated element. JP1992142503A. 1992-05-15.

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