QQ客服 官方微博 反馈留言

	Visible light semiconductor laser
	SUGANO HIKARI
	1992-08-04
著作权人	NEC CORP
专利号	JP1992213886A
国家	日本
文献子类	发明申请
其他题名	Visible light semiconductor laser
英文摘要	PURPOSE:To enable a semiconductor laser to be enhanced in carrier concentration and lessened in threshold current and heat release value without increasing it in crystal defect by a method wherein carbon is made to serve as dopant of a P-side clad layer. CONSTITUTION:An N-(Al0.7Ga0.3)0.5In0.5P clad layer 2 and a Ga0.5In0.5P active layer 3 are formed on an N-GaAs substrate Then, a P-(Al0.7Ga0.3)0.5In0.5P clad layer 4 is provided. At this point, if a growth temperature is set to 600 deg.C or below, carbon generated due to the thermal decomposition of methyl groups is introduced into the clad layer 4 to turn it into a P-type. Then, an SiO2 film is formed on the P-side clad layer 4, the SiO2 film and the P-side clad layer 4 are partially removed excluding a light emitting region, and an N-GaAs current blocking layer 5 is selectively grown through an epitaxial growth method on a region where the SiO2 film and the P-side clad layer 4 have been removed to constitute a waveguide. Thereafter, the residual SiO2 film is removed, and a P-GaAs cap layer is epitaxially grown.
公开日期	1992-08-04
申请日期	1990-12-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88969]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	SUGANO HIKARI. Visible light semiconductor laser. JP1992213886A. 1992-08-04.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。